Semiconductor device and method for manufacturing the same

ABSTRACT

An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

TECHNICAL FIELD

The present invention relates to a semiconductor device including anoxide semiconductor and a manufacturing method thereof.

In this specification, a semiconductor device generally means a devicewhich can function by utilizing semiconductor characteristics, and anelectrooptic device, a semiconductor circuit, and an electronicappliance are all semiconductor devices.

BACKGROUND ART

In recent years, a technique for forming a thin film transistor (TFT) byusing a semiconductor thin film (having a thickness of approximatelyseveral nanometers to several hundred nanometers) formed over asubstrate having an insulating surface has attracted attention. Thinfilm transistors are applied to a wide range of electronic devices suchas ICs or electro-optical devices, and prompt development of thin filmtransistors that are to be used as switching elements in image displaydevices, in particular, is being pushed. Various metal oxides are usedfor a variety of applications. Indium oxide is a well-known material andis used as a transparent electrode material which is necessary forliquid crystal displays and the like.

Some metal oxides have semiconductor characteristics. Examples of suchmetal oxides having semiconductor characteristics include tungstenoxide, tin oxide, indium oxide, and zinc oxide. Thin film transistorsincluding such metal oxide having semiconductor characteristics in itschannel formation region have been proposed (Patent Documents 1 to 4 andNon-Patent Document 1).

Examples of metal oxides include not only an oxide of a single metalelement but also an oxide of a plurality of metal elements(multi-component oxides). For example, InGaO₃(ZnO)_(m) (m is a naturalnumber) which is a homologous compound is a known material asmulti-component oxides including In, Ga, and Zn (Non-Patent Documents 2to 4).

In addition, it has been proved that an oxide semiconductor includingsuch an In—Ga—Zn based oxide can be used as a channel layer of a thinfilm transistor (Patent Document 5, and Non-Patent Documents 5 and 6).

REFERENCE Patent Document

-   [Patent Document 1] Japanese Published Patent Application No.    S60-198861-   [Patent Document 2] Japanese Published Patent Application No.    H8-264794-   [Patent Document 3] Japanese Translation of PCT International    Application No. H11-505377-   [Patent Document 4] Japanese Published Patent Application No.    2000-150900-   [Patent Document 5] Japanese Published Patent Application No.    2004-103957

Non-Patent Document

-   [Non-Patent Document 1] M. W. Prins, K. O. Grosse-Holz, G    Muller, J. F. M. Cillessen, J. B. Giesbers, R. P. Weening, and R. M.    Wolf, “A ferroelectric transparent thin-film transistor”, Appl.    Phys. Lett., 17 Jun. 1996, Vol. 68 pp. 3650-3652-   [Non-Patent Document 2] M. Nakamura, N. Kimizuka, and T. Mohri, “The    Phase Relations in the In₂O₃—Ga₂ZnO₄—ZnO System at 1350° C.”, J.    Solid State Chem., 1991, Vol. 93, pp. 298-315-   [Non-Patent Document 3] N. Kimizuka, M. Isobe, and M. Nakamura,    “Syntheses and Single-Crystal Data of Homologous Compounds,    In₂O₃(ZnO)_(m) (m=3, 4, and 5), InGaO₃(ZnO)₃, and Ga₂O₃(ZnO)_(m)    (m=7, 8, 9, and 16) in the In₂O₃—ZnGa₂O₄—ZnO System”, J. Solid State    Chem., 1995, Vol. 116, pp. 170-178-   [Non-Patent Document 4] M. Nakamura, N. Kimizuka, T. Mohri, and M.    Isobe, “Homologous Series, Synthesis and Crystal Structure of    InFeO₃(ZnO)_(m) (m: natural number) and its Isostructural Compound”,    KOTAI BUTSURI (SOLID STATE PHYSICS), 1993, Vol. 28, No. 5, pp.    317-327-   [Non-Patent Document 5] K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M.    Hirano, and H. Hosono, “Thin-film transistor fabricated in    single-crystalline transparent oxide semiconductor”, SCIENCE, 2003,    Vol. 300, pp. 1269-1272-   [Non-Patent Document 6] K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M.    Hirano, and H. Hosono, “Room-temperature fabrication of transparent    flexible thin-film transistors using amorphous oxide    semiconductors”, NATURE, 2004, Vol. 432 pp. 488-492

DISCLOSURE OF INVENTION

It is an object to provide a highly reliable semiconductor deviceincluding a thin film transistor whose electric characteristics arestable.

In a method for manufacturing a semiconductor device including a thinfilm transistor in which an oxide semiconductor film is used for asemiconductor layer including a channel formation region, heat treatment(which is for dehydration or dehydrogenation) is performed so as toimprove the purity of the oxide semiconductor film and reduce impuritiessuch as moisture. Besides impurities such as moisture existing in theoxide semiconductor film, heat treatment causes reduction of impuritiessuch as moisture existing in the gate insulating layer and those ininterfaces between the oxide semiconductor film and films which areprovided over and below the oxide semiconductor film and are in contactwith the oxide semiconductor film.

In order to reduce impurities such as moisture, after formation of theoxide semiconductor film, heat treatment is performed under an inert-gasatmosphere of nitrogen or a rare gas such as argon or helium or underreduced pressure, at 200° C. or higher, preferably, 400° C. to 600° C.inclusive. In the heat treatment, the formed oxide semiconductor film isexposed. As a result, impurities such as moisture, which are containedin the oxide semiconductor film, are reduced. After heat treatment, slowcooling is performed to a temperature which is equal to or higher thanroom temperature and lower than 100° C. under an inert-gas atmosphere.

Use of an oxide semiconductor film in which contained moisture isreduced by heat treatment performed under an inert-gas atmosphere ofnitrogen, argon, or the like or under reduced pressure allowsimprovement of electric characteristics of a thin film transistor andachievement of both mass productivity and high performance thereof.

Heat treatment was performed on a plurality of samples under a nitrogenatmosphere at heat temperatures whose conditions were determined Such aplurality of samples were measured with thermal desorption spectroscopy(TDS). Measurement results are shown in FIG. 2, FIG. 3, and FIG. 4.

The thermal desorption spectroscopy apparatus is used for detecting andidentifying a gas component discharged or generated from the samples bya quadrupole mass analyzer; thus, a gas and a molecule discharged fromsurfaces and insides of the samples can be observed. Discharge orgeneration of gas from the samples occurs while the samples are heatedand the temperature is rising in high vacuum. With use of a thermaldesorption spectrometer (product name: EMD-WA1000S) manufactured by ESCOLtd., measurement was performed under a condition where the risingtemperature was at approximately 10° C./min., the SEM voltage was set to1500 V, the dwell time was 0.2 (sec), and the number of channels to beused was 23. In addition, during the measurement, the pressure was at adegree of vacuum of about 1×10⁻⁷ (Pa). Note that the ionizationcoefficient, the fragmentation coefficient, the pass-throughcoefficient, and the pumping rate of H₂O were respectively 1.0, 0.805,1.56, and 1.0.

FIG. 2 is a graph showing TDS results of comparison between a sample(comparative sample) which includes only a glass substrate and a sample(Sample 1) where an In—Ga—Zn—O-based non-single-crystal film with a setthickness of 50 nm (an actual thickness obtained after etching is about30 nm) is formed over a glass substrate. FIG. 2 shows results obtainedby measuring H₂O. Discharge of impurities such as moisture (H₂O) fromthe In—Ga—Zn—O-based non-single-crystal film can be confirmed from apeak in the vicinity of 300° C.

FIG. 3 is a graph showing comparison of samples, which shows TDSmeasurement results of H₂O. The comparison was performed on thefollowing samples: the sample (Sample 1) where an In—Ga—Zn—O-basednon-single-crystal film with a set thickness of 50 nm is formed over aglass substrate; a sample (Sample 2) where the structure of Sample 1 issubjected to heat treatment for an hour at 350° C. under an airatmosphere; and a sample (Sample 3) where the structure of Sample 1 issubjected to heat treatment for an hour at 350° C. under a nitrogenatmosphere. From the results shown in FIG. 3, a peak in the vicinity of300° C. of Sample 3 is lower than that of Sample 2. Thus, discharge ofmoisture (H₂O) due to heat treatment performed under a nitrogenatmosphere can be confirmed. Moreover, it is found that heat treatmentperformed under a nitrogen atmosphere reduces impurities such asmoisture (H₂O) more than heat treatment performed under an airatmosphere.

FIG. 4 is a graph showing comparison of samples, which shows TDSmeasurement results of H₂O. The comparison was performed on thefollowing samples: the sample (Sample 1) where an In—Ga—Zn—O-basednon-single-crystal film with a set thickness of 50 nm is formed over aglass substrate; a sample (Sample 4) where the structure of Sample 1 issubjected to heat treatment for an hour at 250° C. under a nitrogenatmosphere; the sample (Sample 3) where the structure of Sample 1 issubjected to heat treatment for an hour at 350° C. under a nitrogenatmosphere; a sample (Sample 5) where the structure of Sample 1 issubjected to heat treatment for an hour at 450° C. under a nitrogenatmosphere; and a sample (Sample 6) where the structure of Sample 1 issubjected to heat treatment for 10 hours at 350° C. under a nitrogenatmosphere. From the results shown in FIG. 4, it is found that thehigher the heat temperature under a nitrogen atmosphere is, the smallerthe amount of impurities such as moisture (H₂O) discharged from theIn—Ga—Zn—O-based non-single-crystal film becomes.

In addition, from the graphs of FIG. 3 and FIG. 4, two peaks can beconfirmed: a first peak in the vicinity of 200° C. to 250° C., whichindicates discharge of impurities such as moisture (H₂O); and a secondpeak at 300° C. or higher, which indicates discharge of impurities suchas moisture (H₂O).

Note that even in the case where the sample which has been subjected toheat treatment at 450° C. under a nitrogen atmosphere is left at roomtemperature in an air atmosphere approximately for one week, dischargeof moisture at 200° C. or higher was not observed. Thus, it is foundthat by performing heat treatment, the In—Ga—Zn—O-basednon-single-crystal film becomes stable.

Further, FIG. 1 shows measurement results of carrier concentrations.Conditions of heat temperature under a nitrogen atmosphere were set to150° C., 175° C., 200° C., 225° C., 250° C., 275° C., 300° C., 325° C.,350° C., 375° C., 400° C., 425° C., and 450° C., and a carrierconcentration at each temperature was measured.

FIG. 5A illustrates a three-dimensional view of a property-evaluationsample 510 for evaluating properties (the carrier concentrations andHall mobility) of an oxide semiconductor film (an In—Ga—Zn—O-basednon-single-crystal film). The property-evaluation sample 510 wasfabricated and subjected to Hall effect measurement at room temperature.The carrier concentration and Hall mobility of the oxide semiconductorfilm were evaluated. The property-evaluation sample 510 was fabricatedin the following manner: an insulating film 501 including siliconoxynitride was formed over a substrate 500, an oxide semiconductor film502 with a size of 10 mm×10 mm, which serves as an evaluation object,was formed over the insulating film 501, and electrodes 503 to 506 eachhaving a diameter of 1 mm were formed over the oxide semiconductor film502. The carrier concentrations of the oxide semiconductor film obtainedby the Hall effect measurement are shown in FIG. 1, the Hall mobilitythereof is shown in FIG. 5B, and conductivity thereof is shown in FIG.5C.

From the results of FIG. 1, FIG. 2, FIG. 3, and FIG. 4, it is found thatthere is a relation, at 250° C. or higher in TDS measurement, betweendischarge of impurities such as moisture (H₂O) from the In—Ga—Zn—O-basednon-single-crystal film and change in carrier concentration. When theimpurities such as moisture (H₂O) are discharged from theIn—Ga—Zn—O-based non-single-crystal film, the carrier concentration isincreased.

Moreover, H, O, OH, H_(z), O₂, N, N₂, and Ar, in addition to H₂O, wereeach measured by TDS. The measurement resulted in that peaks of H₂O, H,O, and OH were observed clearly but peaks of H₂, O₂, N, N₂, and Ar werenot observed. As samples of the above measurement, a structure where anIn—Ga—Zn—O-based non-single-crystal film with a set thickness of 50 nmwas formed over a glass substrate was used. The conditions of heattreatment were set as follows: heat treatment under a nitrogenatmosphere at 250° C. for an hour; that under a nitrogen atmosphere at350° C. for an hour; that under a nitrogen atmosphere at 350° C. for tenhours; and that in a nitrogen atmosphere at 450° C. for an hour. Ascomparative samples, a structure in which heat treatment was notperformed on an In—Ga—Zn—O-based non-single-crystal film and a structureincluding only a glass substrate were measured. FIG. 37, FIG. 38, FIG.39, and FIG. 40 show TDS results of H, O, OH, and H₂, respectively. Notethat under the above conditions of heat treatment, the oxygenconcentration under a nitrogen atmosphere is 20 ppm or lower.

According to the above results, it is found that by performance of heattreatment of the In—Ga—Zn—O-based non-single-crystal film, moisture(H₂O) is mainly discharged. In other words, heat treatment causesdischarge of moisture (H₂O) mainly from the In—Ga—Zn—O-basednon-single-crystal film. The TDS measurement values of H shown in FIG.37, O shown in FIG. 38, and OH shown in FIG. 39 are affected bymaterials obtained by decomposition of water molecules. Note thathydrogen and OH which are considered to be contained in theIn—Ga—Zn—O-based non-single-crystal film are discharged together by heattreatment.

In this specification, heat treatment performed under an inert-gasatmosphere of nitrogen or an inert gas such as argon or helium or underreduced pressure is referred to as heat treatment for dehydration ordehydrogenation. In this specification, “dehydrogenation” does notindicate elimination of only H₂ by heat treatment. For convenience,elimination of H, OH, and the like is referred to as “dehydration ordehydrogenation”.

Impurities (H₂O) contained in an oxide semiconductor layer is reducedand the carrier concentration are increased by heat treatment performedunder an inert gas, and then slow cooling is performed. After slowcooling, the carrier concentration in the oxide semiconductor layer isreduced by formation of an oxide insulating film in contact with theoxide semiconductor layer or the like, which leads to improvement inreliability.

By heat treatment performed under a nitrogen atmosphere, resistance ofan oxide semiconductor layer is reduced (i.e., the carrier concentrationis increased, preferably to 1×10¹⁸/cm³ or higher), so that alow-resistance oxide semiconductor layer can be obtained. After that, ifan oxide insulating film is formed to be in contact with thelow-resistance oxide semiconductor layer, in the low-resistance oxidesemiconductor layer, at least a region in contact with the oxideinsulating film can have increased resistance (i.e., the carrierconcentration is reduced, preferably to lower than 1×10¹⁸/cm³, morepreferably 1×10¹⁴/cm³ or lower). Thus, a high-resistance oxidesemiconductor region can be obtained. During a manufacturing process ofa semiconductor device, it is important to increase and decrease thecarrier concentration in the oxide semiconductor layer by performance ofheat treatment under an inert-gas atmosphere (or reduced pressure), slowcooling, formation of an oxide insulating film, and the like. In otherwords, heat treatment for dehydration or dehydrogenation is performed onan oxide semiconductor layer, which results in that the oxidesemiconductor layer becomes an oxygen-deficiency type and be turned intoan n-type (such as n⁻ or n⁺-type) oxide semiconductor layer. Then, byformation of an oxide insulating film, the oxide semiconductor layer isin an oxygen-excess state and to be an i-type oxide semiconductor layer.When an oxide insulating film is formed over the In—Ga—Zn—O-basednon-single-crystal film, a carrier concentration of 1×10¹⁴/cm³ or lower,which is indicated by a dotted line 10 in FIG. 1, is obtained. In thismanner, a semiconductor device including a thin film transistor havinghigh electric characteristics and high reliability can be provided.

Note that as the oxide insulating film formed to be in contact with thelow-resistance oxide semiconductor layer, an inorganic insulating filmwhich blocks impurities such as moisture, hydrogen ions, and OH⁻ isused. Specifically, a silicon oxide film or a silicon nitride oxide filmis used.

In addition, after the oxide insulating film serving as a protectivefilm is formed to be over and in contact with the low-resistance oxidesemiconductor layer, second heat treatment may be performed. In the casewhere second heat treatment is performed after formation of the oxideinsulating film serving as a protective film to be over and in contactwith the oxide semiconductor layer, variation in electriccharacteristics of thin film transistors can be reduced.

One embodiment of the present invention disclosed in this specificationis a semiconductor device including a gate electrode layer, a gateinsulating layer over the gate electrode layer, an oxide semiconductorlayer over the gate insulating layer, and an insulating layer over theoxide semiconductor layer. The gate insulating layer, the oxidesemiconductor layer, the insulating layer, an interface between the gateinsulating layer and the oxide semiconductor layer, and an interfacebetween the oxide semiconductor layer and the insulating layer have ahydrogen concentration of 3×10²⁰ cm⁻³ or lower.

Moisture contained in the oxide semiconductor layer includes a varietyof forms such as moisture (H₂O), M-OH, M-H, and the like as well ashydrogen. An average value or a peak value of the hydrogen concentrationwhich is the absolute quantity is 3×10²⁰ cm⁻³ or lower, preferably1×10²⁰ cm⁻³ or lower.

Such a concentration range can be obtained by secondary ion massspectrometry (SIMS) or on the basis of data of SIMS.

With the above structure, at least one of the above problems can beresolved.

One embodiment of the present invention to realize the above structureis a method for manufacturing a semiconductor device including the stepsof forming a gate electrode layer, forming a gate insulating layer overthe gate electrode layer, forming an oxide semiconductor layer over thegate insulating layer, performing dehydration or dehydrogenation on theoxide semiconductor layer, forming a source electrode layer and a drainelectrode layer over the dehydrated or dehydrogenated oxidesemiconductor layer, and forming an oxide insulating film which is incontact with a part of the oxide semiconductor layer and over the gateinsulating layer, the oxide semiconductor layer, the source electrodelayer, and the drain electrode layer. Note that dehydration ordehydrogenation is heat treatment performed under a nitrogen atmosphereor a rare gas atmosphere or under reduced pressure.

Another embodiment of the present invention to realize the abovestructure is a method for manufacturing a semiconductor device includingthe steps of forming a gate electrode layer, forming a gate insulatinglayer over the gate electrode layer, forming an oxide semiconductorlayer over the gate insulating layer, heating the oxide semiconductorlayer under an inert atmosphere to increase a carrier concentration,forming a source electrode layer and a drain electrode layer over theoxide semiconductor layer whose carrier concentration is increased, andforming an oxide insulating film which is in contact with a part of theheated oxide semiconductor layer and over the gate insulating layer, theheated oxide semiconductor layer, the source electrode layer, and thedrain electrode layer, so that a carrier concentration is reduced. Notethat after the oxide semiconductor layer is heated under an inertatmosphere at a temperature of 400° C. or higher, slow cooling isperformed to a temperature which is equal to higher than roomtemperature and lower than 100° C.

Another embodiment of the present invention to realize the abovestructure is a method for manufacturing a semiconductor device includingthe steps of forming a gate electrode layer, forming a gate insulatinglayer over the gate electrode layer, forming an oxide semiconductorlayer over the gate insulating layer, heating the oxide semiconductorlayer under a reduced pressure to increase a carrier concentration,forming a source electrode layer and a drain electrode layer over theoxide semiconductor layer whose carrier concentration is increased, andforming an oxide insulating film which is in contact with a part of theheated oxide semiconductor layer and over the gate insulating layer, theheated oxide semiconductor layer, and the source electrode layer, andthe drain electrode layer, so that a carrier concentration is reduced.

In each structure formed by the above manufacturing method, the carrierconcentration of the oxide semiconductor layer whose carrierconcentration is increased is 1×10¹⁸/cm³ or higher. The carrierconcentration of the oxide semiconductor layer whose carrierconcentration is reduced due to formation of the oxide insulating filmis lower than 1×10¹⁸/cm³, preferably 1×10¹⁴/cm³ or lower.

The oxide semiconductor used in this specification is, for example, athin film expressed by InMO₃(ZnO)_(m) (m>0), and a thin film transistorusing the thin film as a semiconductor layer is manufactured. Note thatM denotes one metal element or a plurality of metal elements selectedfrom Ga, Fe, Ni, Mn, and Co. For example, M denotes Ga in some cases;meanwhile, M denotes the above metal element such as Ni or Fe inaddition to Ga (Ga and Ni or Ga and Fe) in other cases. Further, theabove oxide semiconductor may include Fe or Ni, another transitionalmetal element, or an oxide of the transitional metal as an impurityelement in addition to the metal element included as M. In thisspecification, an oxide semiconductor whose composition formula isrepresented as InMO₃(ZnO)_(m) (m>0) where at least Ga is included as Mis referred to as an In—Ga—Zn—O-based oxide semiconductor, and a thinfilm thereof is also referred to as an In—Ga—Zn—O-basednon-single-crystal film.

As the oxide semiconductor which is applied to the oxide semiconductorlayer, any of the following oxide semiconductors can be applied inaddition to the above: an In—Sn—Zn—O-based oxide semiconductor; anIn—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxidesemiconductor; an Al—Ga—Zn—O-based oxide semiconductor; aSn—Al—Zn—O-based oxide semiconductor; an In—Zn—O-based oxidesemiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-basedoxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-basedoxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-basedoxide semiconductor. Moreover, silicon oxide may be included in theabove oxide semiconductor layer. Addition of silicon oxide (SiO_(x)(x>0)) which hinders crystallization into the oxide semiconductor layercan suppress crystallization of the oxide semiconductor layer in thecase where heat treatment is performed after formation of the oxidesemiconductor layer in the manufacturing process. Note that thepreferable state of the oxide semiconductor layer is amorphous, orpartial crystallization thereof is acceptable.

The oxide semiconductor preferably includes In, further preferably,includes In and Ga. Dehydration or dehydrogenation is effective in aprocess of forming an i-type (intrinsic) oxide semiconductor layer.

Since a thin film transistor is easily broken due to static electricityor the like, a protective circuit for protecting the driver circuit ispreferably provided over the same substrate as a gate line or a sourceline. The protective circuit is preferably formed with a non-linearelement including an oxide semiconductor.

Further, treatment of the gate insulating layer and the oxidesemiconductor film may be successively performed without exposure toair. Such treatment is also called successive treatment, an in-situstep, or successive film formation. Successive treatment withoutexposure to air enables an interface between the gate insulating layerand the oxide semiconductor film to be formed without being contaminatedby atmospheric components or contamination impurities floating in theair, such as moisture or hydrocarbon. Thus, variation in characteristicsof thin film transistors can be reduced.

Note that the term “successive treatment” in this specification meansthat during the process from a first treatment step performed by a PCVDmethod or a sputtering method to a second treatment step performed by aPCVD method or a sputtering method, an atmosphere in which a substrateto be processed is disposed is not contaminated by a contaminantatmosphere such as air, and is constantly controlled to be vacuum or aninert-gas atmosphere (a nitrogen atmosphere or a rare gas atmosphere).By the successive treatment, treatment such as film formation can beperformed while moisture or the like is prevented from attaching againto the substrate to be processed which is cleaned.

Performing the process from the first treatment step to the secondtreatment step in the same chamber is within the scope of the successivetreatment in this specification. Further, the case where the processfrom the first treatment step to the second treatment is performed indifferent chambers in the following manner is also within the scope ofthe successive treatment in this specification: the substrate istransferred after the first treatment step to another chamber withoutbeing exposed to air and subjected to the second treatment.

Note that the case where there is the following step between the firsttreatment step and the second treatment step is also within the scope ofthe successive treatment in this specification: a substrate transferstep, an alignment step, a slow cooling step, a heating or cooling asubstrate step which is for setting the substrate to have temperaturesuitable to the second film formation step, or the like.

However, the following case is not within the scope of the successivetreatment in this specification: there is a step in which liquid isused, such as a cleaning step, a wet etching step, or a resist formationstep between the first treatment step and the second treatment step.

A thin film transistor having stable electric characteristics can beprovided. Further, a semiconductor device which includes thin filmtransistors having excellent electric characteristics and highreliability can be provided.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a graph showing the carrier concentration of an oxidesemiconductor layer with respect to heating temperatures.

FIG. 2 is a graph showing TDS measurement results.

FIG. 3 is a graph showing TDS measurement results.

FIG. 4 is a graph showing TDS measurement results.

FIG. 5A is a three-dimensional view of a property-evaluation sample,FIG. 5B is a graph showing results of Hall effect measurement of anoxide semiconductor layer, and FIG. 5C is a graph showing conductivity.

FIGS. 6A to 6D are cross-sectional views illustrating manufacturingsteps of one embodiment of the present invention.

FIGS. 7A and 7B illustrate a semiconductor device of one embodiment ofthe present invention.

FIGS. 8A to 8D are cross-sectional views illustrating manufacturingsteps of one embodiment of the present invention.

FIGS. 9A and 9B illustrate a semiconductor device of one embodiment ofthe present invention.

FIGS. 10A to 10D are cross-sectional views illustrating manufacturingsteps of one embodiment of the present invention.

FIGS. 11A to 11C are cross-sectional views illustrating manufacturingsteps of one embodiment of the present invention.

FIG. 12 illustrates a semiconductor device of one embodiment of thepresent invention.

FIGS. 13A1 and 13A2 and FIGS. 13B1 and 13B2 illustrate a semiconductordevice of one embodiment of the present invention.

FIG. 14 is a cross-sectional view of an electric furnace.

FIG. 15 illustrates a semiconductor device.

FIGS. 16A1 and 16A2 and 16B illustrate a semiconductor device.

FIGS. 17A and 17B illustrate a semiconductor device.

FIG. 18 illustrates a pixel equivalent circuit of a semiconductordevice.

FIGS. 19A to 19C illustrate a semiconductor device.

FIGS. 20A and 20B are each a block diagram of a semiconductor device.

FIG. 21 illustrates a configuration of a signal line driver circuit.

FIG. 22 is a timing chart of operation of a signal line driver circuit.

FIG. 23 is a timing chart illustrating operation of a signal line drivercircuit.

FIG. 24 illustrates a configuration of a shift register.

FIG. 25 illustrates a connection structure of a flip-flop of FIG. 24.

FIG. 26 illustrates a semiconductor device.

FIG. 27 is an external view illustrating an example of an e-book reader.

FIGS. 28A and 28B are external views respectively illustrating anexample of a television set and an example of a digital photo frame.

FIGS. 29A and 29B are external views illustrating examples of gamemachines.

FIGS. 30A and 30B are external views illustrating an example of aportable computer and an example of a mobile phone, respectively.

FIGS. 31A to 31D illustrate a method for manufacturing a semiconductordevice.

FIG. 32 illustrates a semiconductor device of one embodiment of thepresent invention.

FIG. 33 illustrates a semiconductor device of one embodiment of thepresent invention.

FIGS. 34A to 34C illustrate a semiconductor device of one embodiment ofthe present invention.

FIGS. 35A and 35B illustrate a semiconductor device of one embodiment ofthe present invention.

FIG. 36 illustrates a semiconductor device of one embodiment of thepresent invention.

FIG. 37 is a graph showing TDS results about H.

FIG. 38 is a graph showing TDS results about O.

FIG. 39 is a graph showing TDS results about OH.

FIG. 40 is a graph showing TDS results about H₂.

FIGS. 41A to 41C are graphs each showing Vg-Id characteristics of a thinfilm transistor before and after a BT test.

FIG. 42 is a view illustrating a structure of an oxide semiconductorlayer used for calculation.

FIG. 43 is a graph describing calculation results of the oxygen densityin an oxide semiconductor layer.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. However, the presentinvention is not limited to the description below, and it is easilyunderstood by those skilled in the art that modes and details disclosedherein can be modified in various ways without departing from the spiritand the scope of the present invention. Therefore, the present inventionis not construed as being limited to description of the embodiments.

Embodiment 1

A semiconductor device and a method for manufacturing a semiconductordevice will be described with reference to FIGS. 6A to 6D and FIGS. 7Aand 7B.

FIG. 7A is a top view of a thin film transistor 470 of a semiconductordevice, and FIG. 7B is a cross-sectional view along line C1-C2 of FIG.7A. The thin film transistor 470 is a bottom-gate thin film transistorand includes, over a substrate 400 which is a substrate having aninsulating surface, a gate electrode layer 401, a gate insulating layer402, a semiconductor layer 403, and source and drain electrode layers405 a and 405 b. In addition, an oxide insulating film 407 is providedto cover the thin film transistor 470 and be in contact with thesemiconductor layer 403.

The semiconductor layer 403 formed using an oxide semiconductor film issubjected to heat treatment (heat treatment for dehydration ordehydrogenation) for reducing impurities such as moisture and the likeat least after formation of the oxide semiconductor film, so thatresistance is reduced (i.e., the carrier concentration is increased,preferably to 1×10¹⁸/cm³ or higher). After that, the oxide insulatingfilm 407 is formed to be in contact with the oxide semiconductor film,so that the oxide semiconductor film has increased resistance (i.e., thecarrier concentration is reduced, preferably to lower than 1×10¹⁸/cm³,more preferably 1×10¹⁴/cm³ or lower). Accordingly, the oxidesemiconductor film can be used as a channel formation region.

After elimination of impurities such as moisture (H₂O) by performance ofheat treatment for dehydration or dehydrogenation, it is preferable thatslow cooling be performed under an inert atmosphere. After the heattreatment for dehydration or dehydrogenation and the slow cooling, thecarrier concentration of the oxide semiconductor layer is reduced byformation of an oxide insulating film to be in contact with the oxidesemiconductor layer or the like, which improves reliability of the thinfilm transistor 470.

Besides impurities such as moisture inside the semiconductor layer 403,the heat treatment causes reduction in impurities such as moistureinside the gate insulating layer 402 and in interfaces provided betweenthe semiconductor layer 403 formed using an oxide semiconductor andfilms which are over and below the semiconductor layer 403 to be incontact therewith. Specifically, the interfaces indicate an interfacebetween the gate insulating layer 402 and the semiconductor layer 403and an interface between the oxide insulating film 407 and thesemiconductor layer 403.

Here, an example showing results of the reliability test of the thinfilm transistor 470 is described with reference to FIGS. 41A to 41C.

One of methods for examining reliability of thin film transistors is abias-temperature stress test (hereinafter, referred to as a BT test).The BT test is one kind of an accelerated test and can evaluate changein characteristics, caused by long-term usage, of thin film transistorsin a short time. In particular, the amount of shift in threshold voltageof the thin film transistor between before and after the BT test is animportant indicator for examining reliability. Between before and afterthe BT test, the small amount of shift in threshold voltage means highreliability.

Specifically, the temperature of a substrate over which a thin filmtransistor is formed (substrate temperature) is set at fixedtemperature, a source and a drain of the thin film transistor are set atthe same potential, and a gate is supplied with potential different fromthose of the source and the drain for a certain period. The substratetemperature may be set as appropriate in accordance with the purpose ofthe test. A test in the case where potential applied to the gate ishigher than potentials of the source and the drain is referred to as a+BT test, and a test in the case where potential applied to the gate islower than potentials of the source and the drain is referred to as a−BT test.

The stress conditions for the BT test can be determined by setting thesubstrate temperature, electric field intensity applied to a gateinsulating film, or a time period of application of electric field. Theelectric field intensity applied to a gate insulating film can bedetermined by dividing the potential difference between the gatepotential and the source and drain potential by the thickness of thegate insulating film. For example, in the case where the electric fieldintensity applied to the 100-nm-thick gate insulating film is to be setto 2 MV/cm, the potential difference may be set to 20 V.

In this embodiment, results of a BT test performed on three kinds ofsamples are described. The samples are subjected to heat treatment undera nitrogen atmosphere at 250° C., 350° C., and 450° C., which isperformed before formation of source and drain in manufacture of a thinfilm transistor.

Note that “voltage” generally indicates a difference between potentialsof two points, and “potential” indicates a static electric energy(electrical potential energy) unit charge which is at a point in astatic electric field has. However, in an electronic circuit, adifference between a potential at a certain point and a referencepotential (e.g., a ground potential) is often referred to as thepotential at a certain point. Thus, in this specification, when adifference between a potential at a certain point and a referencepotential (e.g., a ground potential) is referred to as the potential ata certain point, the potential at a certain point means the voltageexcept for the case where definition is particularly given.

As the BT test, a +BT test and a −BT test were performed under suchconditions that a substrate temperature was 150° C., an electric fieldintensity applied to a gate insulating film was 2 MV/cm, and a timeperiod for application was one hour.

First, the +BT test is described. In order to measure initialcharacteristics of a thin film transistor subjected to the BT test, achange in characteristics of the source-drain current (hereinafter,referred to as the drain current) was measured, under the conditionswhere the substrate temperature was set to 40° C., the voltage betweensource and drain (hereinafter, the drain voltage) was set to 10 V, andthe voltage between source and gate (hereinafter, the gate voltage) waschanged in the range of −20 V to +20 V. That is, Vg-Id characteristicswere measured. Here, as a countermeasure against moisture-absorptiononto surfaces of the samples, the substrate temperature was set to 40°C. However, the measurement may be performed at room temperature (25°C.) or lower if there is no particular problem.

Next, the substrate temperature was increased to 150° C., and then, thepotentials of the source and the drain of the thin film transistor wereset to 0 V. After that, the voltage was applied to the gate so that theelectric field intensity applied to the gate insulating film was 2MV/cm. In this case, the thickness of the gate insulating film of thethin film transistor was 100 nm. The gate was supplied with +20 V ofvoltage, and the gate supplied with the voltage was kept for one hour.Note that although the time period for voltage application was one hourhere, the time period may be changed as appropriate in accordance withthe purpose.

Next, the substrate temperature was lowered to 40° C. while the voltagewas kept on being applied to the source, the drain, and the gate. Ifapplication of the voltage is stopped before the substrate temperaturewas completely lowered to 40° C., the thin film transistor which hasbeen damaged during the BT test is repaired by the influence of residualheat. Thus, lowering of the substrate temperature needs to be performedwith application of the voltage. After the substrate temperature waslowered to 40° C., application of the voltage was terminated.

Then, the Vg-Id characteristics were measured under the conditions sameas those for the measurement of the initial characteristics, so that theVg-Id characteristics after the +BT test were obtained.

Next, the −BT test is described. The −BT test was performed with theprocedure similar to the +BT test, but has a different point from the+BT test, in that the voltage applied to the gate after the substratetemperature is increased to 150° C. is set to −20 V.

In the BT test, it is important to use a thin film transistor which hasbeen never subjected to a BT test. For example, if a −BT test isperformed with use of a thin film transistor which has been oncesubjected to a +BT test, the results of the −BT test cannot be evaluatedcorrectly due to influence of the +BT test which has been performedpreviously. Similarly, if the thin film transistor which has been oncesubjected to a +BT test is used for another +BT test, the results cannotbe evaluated correctly. However, the usage of the thin film transistoris not limited to the above in the case where the BT test is performedrepeatedly in consideration of such influence.

FIGS. 41A to 41C show the Vg-Id characteristics before and after the BTtests. FIG. 41A shows the BT test results of thin film transistors eachformed in such a manner that heat treatment is performed under anitrogen atmosphere at 250° C. before formation of a source and a drain.FIG. 41B shows the BT test results of thin film transistors each formedin such a manner that heat treatment is performed under a nitrogenatmosphere at 350° C. before formation of a source and a drain. FIG. 41Cshows the BT test results of thin film transistors each formed in such amanner that heat treatment is performed under a nitrogen atmosphere at450° C. before formation of a source and a drain.

In each graph, the horizontal axis represents the gate voltage (Vg)which is shown with a logarithmic scale, and the vertical axisrepresents the drain current (Id) which is shown with a logarithmicscale. Initial characteristics 711, 721, and 731 indicate the Vg-Idcharacteristics of the thin film transistors before the +BT tests, +BTs712, 722, and 732 indicate the Vg-Id characteristics of the thin filmtransistors after +BT tests, and −BTs 713, 723, and 733 indicate theVg-Id characteristics of the thin film transistors after −BT tests. Notethat the Vg-Id characteristics of the thin film transistors before the−BT tests are almost the same as those before the +BT tests; thus, theyare not shown in the graphs.

According to FIGS. 41A to 41C, it is found that as compared to thethreshold voltages of the initial characteristics 711, 721, and 731, thethreshold voltages of the +BTs 712, 722, and 732 are shifted in the plusdirection, and the threshold voltages of the −BTs 713, 723, and 733 areshifted in the minus direction. In addition, in terms of the amount ofshift in the threshold voltage after +BT test, it is found that theshift amount at 350° C. of FIG. 41B is smaller than that at 250° C. ofFIG. 41A and that the shift amount at 450° C. of FIG. 41C is smallerthan that at 350° C. of FIG. 41B. That is, the higher the temperature ofheat treatment which is performed before formation of a source and adrain is made, the smaller the amount of shift in the threshold voltageafter +BT tests becomes.

The temperature of heat treatment at 450° C. or higher can improvereliability in at least the +BT tests. It is found that there is arelation between elimination of impurities such as moisture (H₂O) fromthe In—Ga—Zn—O-based non-single-crystal film and the results of the BTstress tests.

The source and drain electrode layers 405 a and 405 b in contact withthe semiconductor layer 403 which is an oxide semiconductor layer isformed using one or more materials selected from titanium, aluminum,manganese, magnesium, zirconium, and beryllium. Further, an alloy filmincluding these elements in combination, and the like, may be stacked.

The semiconductor layer 403 including a channel formation region may beformed using an oxide material having semiconductor characteristics.Typically, an In—Ga—Zn—O-based non-single-crystal film is used.

FIGS. 6A to 6D are cross-sectional views illustrating manufacturingsteps of the thin film transistor 470.

In FIG. 6A, the gate electrode layer 401 is provided over the substrate400 which is a substrate having an insulating surface. An insulatingfilm serving as a base film may be provided between the substrate 400and the gate electrode layer 401. The base film has a function ofpreventing diffusion of an impurity element from the substrate 400, andcan be formed to have a single-layer or stacked-layer structure usingone or more of a silicon nitride film, a silicon oxide film, a siliconnitride oxide film, and a silicon oxynitride film. The gate electrodelayer 401 can be formed to have a single-layer or stacked-layerstructure using a metal material such as molybdenum, titanium, chromium,tantalum, tungsten, aluminum, copper, neodymium, or scandium, or analloy material which contains any of these materials as its maincomponent.

For example, as a two-layer structure of the gate electrode layer 401,the following structures are preferable: a two-layer structure of analuminum layer and a molybdenum layer stacked thereover, a two-layerstructure of a copper layer and a molybdenum layer stacked thereover, atwo-layer structure of a copper layer and a titanium nitride layer or atantalum nitride layer stacked thereover, and a two-layer structure of atitanium nitride layer and a molybdenum layer. As a stacked structure ofthree layers, a stacked layer of a tungsten layer or a tungsten nitridelayer, an alloy of aluminum and silicon or an alloy of aluminum andtitanium, and a titanium nitride layer or a titanium layer ispreferable.

The gate insulating layer 402 is formed over the gate electrode layer401.

The gate insulating layer 402 can be formed to have a single layer of asilicon oxide layer, a silicon nitride layer, a silicon oxynitridelayer, or a silicon nitride oxide layer or a stacked layer thereof by aplasma CVD method or a sputtering method. For example, a siliconoxynitride layer may be formed by a plasma CVD method using SiH₄,oxygen, and nitrogen as a deposition gas.

Next, an oxide semiconductor film is formed over the gate insulatinglayer 402.

Note that before the oxide semiconductor film is formed by a sputteringmethod, dust on a surface of the gate insulating layer 402 is preferablyremoved by reverse sputtering in which an argon gas is introduced andplasma is generated. The reverse sputtering refers to a method in which,without application of a voltage to a target side, an RF power source isused for application of a voltage to a substrate side under an argonatmosphere and plasma is generated in the vicinity of the substrate tomodify a surface. Note that instead of an argon atmosphere, a nitrogenatmosphere, a helium atmosphere, or the like may be used. Alternatively,an argon atmosphere to which oxygen, N₂O, or the like is added may beused. Further alternatively, an argon atmosphere to which Cl₂, CF₄, orthe like is added may be used.

The oxide semiconductor film is formed by a sputtering method with useof an In—Ga—Zn—O-based oxide semiconductor target. Alternatively, theoxide semiconductor film can be formed by a sputtering method under arare gas (typically, argon) atmosphere, an oxygen atmosphere, or anatmosphere of a rare gas (typically, argon) and oxygen.

The gate insulating layer 402 and the oxide semiconductor film may beformed successively without exposure to air. Successive film formationwithout exposure to air makes it possible to obtain an interface ofstacked layers, which are not contaminated by atmospheric components orimpurity elements floating in air, such as moisture or hydrocarbon.Therefore, variation in characteristics of the thin film transistor canbe reduced.

The oxide semiconductor film is processed into an island-shaped oxidesemiconductor layer 430 (a first oxide semiconductor layer) by aphotolithography step (see FIG. 6A).

Heat treatment is performed on the oxide semiconductor layer under anatmosphere of an inert gas (such as nitrogen, helium, neon, or argon) orunder reduced pressure, and then, slow cooling is performed under aninert atmosphere (see FIG. 6B). By heat treatment performed on the oxidesemiconductor layer 430 under such an atmosphere, impurities containedin the oxide semiconductor layer 430, such as hydrogen and moisture, canbe removed.

Note that in heat treatment, it is preferable that moisture, hydrogen,and the like be not contained in nitrogen or a rare gas such as helium,neon, or argon. Alternatively, it is preferable that nitrogen or a raregas such as helium, neon, or argon introduced into an apparatus for heattreatment have purity of 6N (99.9999%) or more, preferably, 7N(99.99999%) or more; that is, an impurity concentration is set to 1 ppmor lower, preferably, 0.1 ppm or lower.

As heat treatment, an instantaneous heating method can be employed, suchas a heating method using an electric furnace, a GRTA (gas rapid thermalanneal) method using a heated gas, or an LRTA (Lamp Rapid ThermalAnneal) method using lamp light.

Here, a heating method using an electric furnace 601 is described withreference to FIG. 14 as one mode of heat treatment of the oxidesemiconductor layer 430.

FIG. 14 is a schematic view of the electric furnace 601. Heaters 603 areprovided outside a chamber 602, which heats the chamber 602. Inside thechamber 602, a susceptor 605 in which a substrate 604 is mounted isprovided. The substrate 604 is transferred into/from the chamber 602. Inaddition, the chamber 602 is provided with a gas supply means 606 and anevacuation means 607. With the gas supply means 606, a gas is introducedinto the chamber 602. The evacuation means 607 exhausts the inside ofthe chamber 602 or reduces the pressure in the chamber 602. Note thatthe temperature rising characteristics of the electric furnace ispreferably set to from 0.1° C./min to 20° C./min. The temperaturedecreasing characteristics of the electric furnace is preferably set tofrom 0.1° C./min to 15° C./min.

The gas supply means 606 includes a gas supply source 611, a pressureadjusting valve 612, a refining apparatus 613, a mass flow controller614, and a stop valve 615. In this embodiment, it is preferable that therefining apparatus 613 be provided between the gas supply source 611 andthe chamber 602. The refining apparatus 613 can remove impurities suchas moisture and hydrogen in a gas which is introduced from the gassupply source 611 into the chamber 602; thus, entry into the chamber602, of moisture, hydrogen, and the like, can be suppressed by provisionof the refining apparatus 613.

In this embodiment, nitrogen or a rare gas is introduced into thechamber 602 from the gas supply source 611, so that the inside of thechamber 602 is in a nitrogen or a rare gas atmosphere. In the chamber602 heated at from 200° C. to 600° C. inclusive, preferably, from 400°C. to 450° C. inclusive, the oxide semiconductor layer 430 formed overthe substrate 604 is heated, whereby the oxide semiconductor layer 430can be dehydrated or dehydrogenated.

Alternatively, the chamber 602 in which the pressure is reduced by theevacuation means is heated at from 200° C. to 600° C. inclusive,preferably, from 400° C. to 450° C. inclusive. In such a chamber 602,the oxide semiconductor layer 430 formed over the substrate 604 isheated, whereby the oxide semiconductor layer 430 can be dehydrated ordehydrogenated.

Next, the heaters are turned off, and the chamber 602 of the heatingapparatus is gradually cooled. By performance of heat treatment and slowcooling under an inert-gas atmosphere or under reduced pressure,resistance of the oxide semiconductor layer is reduced (i.e., thecarrier concentration is increased, preferably to 1×10¹⁸/cm³ or higher),so that a low-resistance oxide semiconductor layer 431 (a second oxidesemiconductor layer) can be formed.

As a result, reliability of the thin film transistor formed later can beimproved.

Note that in the case where heat treatment is performed under reducedpressure, an inert gas may be discharged after the heat treatment, sothat the chamber is to be under an atmospheric pressure, and then,cooling may be performed.

After the substrate 604 in the chamber 602 of the heating apparatus iscooled to 300° C., the substrate 604 may be transferred into anatmosphere at room temperature. As a result, the cooling time of thesubstrate 604 can be shortened.

If the heating apparatus has a multi-chamber structure, heat treatmentand cool treatment can be performed in chambers different from eachother. Typically, an oxide semiconductor layer over a substrate isheated in a first chamber which is filled with nitrogen or a rare gasand heated at from 200° C. to 600° C. inclusive, preferably from 400° C.to 450° C. inclusive. Next, the substrate subjected to heat treatment istransferred, through a transfer chamber in which nitrogen or a rare gasis introduced, into a second chamber which is filled with nitrogen or arare gas and heated at 100° C. or lower, preferably at room temperature,and then cooling treatment is performed therein. Through the abovesteps, throughput can be increased.

The heat treatment of the oxide semiconductor layer under an inert-gasatmosphere or reduced pressure may be performed on the oxidesemiconductor film which has not yet been processed into theisland-shaped oxide semiconductor layer. In that case, after heattreatment of the oxide semiconductor film performed under an inert-gasatmosphere or reduced pressure, slow cooling is performed to thetemperature equal to or higher than room temperature and lower than 100°C. Then, the substrate is taken out from the heating apparatus, and aphotolithography step is performed.

The oxide semiconductor film which has been subjected to heat treatmentunder an inert-gas atmosphere or reduced pressure is preferably anamorphous film, but a part thereof may be crystallized.

Next, a conductive film is formed over the gate insulating layer 402 andthe oxide semiconductor layer 431.

As a material for the conductive film, an element selected from Al, Cr,Ta, Ti, Mo, and W; an alloy containing any of the above elements as itscomponent; an alloy film containing a combination of any of the aboveelements; and the like can be given.

If heat treatment is performed after formation of the conductive film,the conductive film preferably has heat resistance enough to withstandthe heat treatment. Since use of Al alone brings disadvantages such aslow resistance and a tendency to be corroded, aluminum is used incombination with a conductive material having heat resistance. As theconductive material having heat resistance which is used in combinationwith Al, any of the following materials may be used: an element selectedfrom titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo),chromium (Cr), neodymium (Nd), and scandium (Sc), an alloy containingany of these above elements as a component, an alloy containing theseelements in combination, and a nitride containing any of these aboveelements as a component.

The oxide semiconductor layer 431 and the conductive film are etched inan etching step, so that an oxide semiconductor layer 432 and the sourceand drain electrode layers 405 a and 405 b are formed (see FIG. 6C).Note that the oxide semiconductor layer 432 is partly etched so as tohave a groove (a depressed portion).

The oxide insulating film 407 is formed by a sputtering method so as tobe in contact with the oxide semiconductor layer 432. The oxideinsulating film 407 which is formed to be in contact with thelow-resistance oxide semiconductor layer does not contain impuritiessuch as moisture, a hydrogen ion, and OH⁻ and is formed using aninorganic insulating film which prevents the impurities from enteringfrom the outside. Specifically, a silicon oxide film or a siliconnitride oxide is used.

In this embodiment, as the oxide insulating film 407, a 300-nm-thicksilicon oxide film is formed. The substrate temperature in filmformation may be from room temperature to 300° C. or lower and in thisembodiment, is 100° C. The formation of the silicon oxide film by asputtering method can be performed under a rare gas (typically, argon)atmosphere, an oxygen atmosphere, or an atmosphere of a rare gas(typically, argon) and oxygen. As a target, a silicon oxide target or asilicon target may be used. For example, with use of a silicon target, asilicon oxide film can be formed by a sputtering method under anatmosphere of oxygen and nitrogen.

When the oxide insulating film 407 is formed by a sputtering method, aPCVD method, or the like to be in contact with the low-resistance oxidesemiconductor layer 432, in the low-resistance oxide semiconductor layer432, at least a region in contact with the oxide insulating film 407have increased resistance (i.e., the carrier concentration is reduced,preferably to lower than 1×10¹⁸/cm³). Thus, a high-resistance oxidesemiconductor region can be obtained. During a manufacture process of asemiconductor device, it is important to increase and decrease thecarrier concentration in the oxide semiconductor layer throughperformance of heat treatment and slow cooling under an inert-gasatmosphere (or reduced pressure), formation of an oxide insulating film,and the like. The oxide semiconductor layer 432 becomes thesemiconductor layer 403 having a high-resistance oxide semiconductorregion (a third oxide semiconductor layer), and then, the thin filmtransistor 470 can be completed (see FIG. 6D).

Impurities (such as H₂O, H, and OH) contained in the oxide semiconductorlayer are reduced by performance of the heat treatment for dehydrationor dehydrogenation, and the carrier concentration is increased. Afterthat, slow cooling is performed. Then, formation of an oxide insulatingfilm in contact with the oxide semiconductor layer, or the like, isperformed, so that the carrier concentration of the oxide semiconductorlayer is reduced. Thus, reliability of the thin film transistor 470 canbe improved.

Further, after formation of the oxide insulating film 407, heattreatment may be performed on the thin film transistor 470, under anitrogen atmosphere or an air atmosphere (in air) at temperature equalto or higher than 150° C. and lower than 350° C., preferably. Forexample, heat treatment under a nitrogen atmosphere at 250° C. isperformed for one hour. In such heat treatment, the oxide semiconductorlayer 432 in a condition of being in contact with the oxide insulatingfilm 407 is heated; thus, variation in electric characteristics of thethin film transistor 470 can be reduced. There is no particularlimitation on when to perform this heat treatment (at temperature equalto or higher than 150° C. and lower than 350° C., preferably) as long asit is performed after the oxide insulating film 407 is formed. When thisheat treatment also serves as heat treatment in another step, e.g., heattreatment in formation of a resin film or heat treatment for reducingresistance of a transparent conductive film, the number of steps can beprevented from increasing.

Embodiment 2

A semiconductor device and a method for manufacturing a semiconductordevice will be described with reference to FIGS. 8A to 8D and FIGS. 9Aand 9B. The same portion as or a portion having functions similar tothose described in Embodiment 1 can be formed in a manner similar tothat described in Embodiment 1; therefore, repetitive description isomitted.

FIG. 9A is a top view of a thin film transistor 460 included in asemiconductor device, and FIG. 9B is a cross-sectional view along lineD1-D2 of FIG. 9A. The thin film transistor 460 is a bottom-gate thinfilm transistor and includes, over a substrate 450 which is a substratehaving an insulating surface, a gate electrode layer 451, a gateinsulating layer 452, source and drain electrode layers 455 a and 455 b,and a semiconductor layer 453. In addition, an oxide insulating film 457is provided so as to cover the thin film transistor 460 and be incontact with the semiconductor layer 453. For the semiconductor layer453, an In—Ga—Zn—O-based non-single-crystal film is used.

In the thin film transistor 460, the gate insulating layer 452 existsthroughout the region including the thin film transistor 460, and thegate electrode layer 451 is provided between the gate insulating layer452 and the substrate 450 which is a substrate having an insulatingsurface. Over the gate insulating layer 452, the source and drainelectrode layers 455 a and 455 b are provided. Further, over the gateinsulating layer 452 and the source and drain electrode layers 455 a and455 b, the semiconductor layer 453 is provided. Although notillustrated, in addition to the source and drain electrode layers 455 aand 455 b, a wiring layer is provided over the gate insulating layer452, and the wiring layer extends beyond the peripheral portion of thesemiconductor layer 453.

The semiconductor layer 453 formed using an oxide semiconductor film issubjected to heat treatment (heat treatment for dehydration ordehydrogenation) for reducing impurities such as moisture and the likeat least after formation of the oxide semiconductor film, so thatresistance is reduced (the carrier concentration is increased,preferably to 1×10¹⁸/cm³ or higher). After that, the oxide insulatingfilm 457 is formed to be in contact with the oxide semiconductor film,so that the oxide semiconductor film has increased resistance (i.e., thecarrier concentration is reduced, preferably to lower than 1×10¹⁸/cm³).Accordingly, the oxide semiconductor film can be used as a channelformation region.

After elimination of impurities such as moisture (H₂O) by performance ofheat treatment for dehydration or dehydrogenation, it is preferable thatslow cooling be performed in an inert atmosphere. After heat treatmentfor dehydration or dehydrogenation and slow cooling, the carrierconcentration of the oxide semiconductor layer is reduced by formationof an oxide insulating film to be in contact with the oxidesemiconductor layer or the like, which improves reliability of the thinfilm transistor 460.

The source and drain electrode layers 455 a and 455 b in contact withthe semiconductor layer 453 which is an oxide semiconductor layer isformed using one or more materials selected from titanium, aluminum,manganese, magnesium, zirconium, and beryllium.

FIGS. 8A to 8D are cross-sectional views illustrating manufacturingsteps of the thin film transistor 460.

The gate electrode layer 451 is provided over the substrate 450 which isa substrate having an insulating surface. An insulating film serving asa base film may be provided between the substrate 450 and the gateelectrode layer 451. The base film has a function of preventingdiffusion of an impurity element from the substrate 450, and can beformed to have a single-layer or stacked-layer structure using one ormore of a silicon nitride film, a silicon oxide film, a silicon nitrideoxide film, and a silicon oxynitride film. The gate electrode layer 451can be formed to have a single-layer or stacked-layer structure using ametal material selected from molybdenum, titanium, chromium, tantalum,tungsten, aluminum, copper, neodymium, and scandium, or an alloymaterial which contains any of these materials as its main component.

The gate insulating layer 452 is formed over the gate electrode layer451.

The gate insulating layer 452 can be formed by a plasma CVD method or asputtering method to have a single layer of a silicon oxide layer, asilicon nitride layer, a silicon oxynitride layer, or a silicon nitrideoxide layer or a stacked layer thereof.

Over the gate insulating layer 452, a conductive film is formed andpatterned into island-shaped source and drain electrode layers 455 a and455 b by a photolithography step (FIG. 8A).

As the material of the source and drain electrode layers 455 a and 455b, there are an element selected from Al, Cr, Ta, Ti, Mo, and W, analloy including any of these elements as its component, an alloyincluding a combination of any of these elements, and the like. Further,an alloy film including these elements in combination, and the like, maybe stacked.

The source and drain electrode layers 455 a and 455 b are preferablyformed using a molybdenum film having high heat resistance enough towithstand heat treatment for dehydration or dehydrogenation performedlater. In addition, an element selected from Al, Cr, Ta, Ti, and W, analloy including any of the above elements, an alloy film including theseelements in combination, and the like may be stacked over the molybdenumfilm.

Then, an oxide semiconductor film is formed over the gate insulatinglayer 452 and the source and drain electrode layers 455 a and 455 b, andpatterned into an island-shaped oxide semiconductor layer 483 (a firstoxide semiconductor layer) by a photolithography step (FIG. 8B).

The oxide semiconductor layer 483 serves as a channel formation regionand is thus formed in a manner similar to the first oxide semiconductorfilm in Embodiment 1.

Note that before the oxide semiconductor layer 483 is formed by asputtering method, dust attached to a surface of the gate insulatinglayer 452 is preferably removed by reverse sputtering in which an argongas is introduced and plasma is generated.

Heat treatment for dehydration or dehydrogenation is performed on theoxide semiconductor layer 483, and then, slow cooling is performed underan inert atmosphere. As heat treatment for dehydration ordehydrogenation, heat treatment is performed under an inert gas (such asnitrogen, helium, neon, or argon) atmosphere or under reduced pressureat temperature of from 200° C. to 600° C. inclusive, preferably, from400° C. to 450° C. inclusive. By the heat treatment in the aboveatmosphere, resistance of the oxide semiconductor layer 483 is reduced(i.e., the carrier concentration is increased, preferably to 1×10¹⁸/cm³or higher), so that a low-resistance oxide semiconductor layer 484 (asecond oxide semiconductor layer) can be obtained (see FIG. 8C).

Note that in heat treatment for dehydration or dehydrogenation, it ispreferable that moisture, hydrogen, and the like be not contained innitrogen or a rare gas such as helium, neon, or argon. Alternatively, itis preferable that nitrogen or a rare gas such as helium, neon, or argonintroduced into an apparatus for heat treatment have purity of 6N(99.9999%) or more, preferably, 7N (99.99999%) or more; that is, animpurity concentration is set to 1 ppm or lower, preferably, 0.1 ppm orlower.

The heat treatment of the oxide semiconductor layer under an inert-gasatmosphere or under reduced pressure may be performed on the oxidesemiconductor film which has not yet been processed into theisland-shaped oxide semiconductor layer. In that case, after heattreatment of the oxide semiconductor film performed under an inert-gasatmosphere or reduced pressure, slow cooling is performed to thetemperature equal to or higher than room temperature and lower than 100°C. Then, the substrate is taken out from the heating apparatus, and aphotolithography step is performed.

Next, the oxide insulating film 457 is formed by a sputtering method ora PCVD method to be in contact with the oxide semiconductor layer 484.In this embodiment, a 300-nm-thick silicon oxide film is formed as theoxide insulating film 457. The substrate temperature in film formationmay be from room temperature to 300° C. or lower and in this embodiment,is 100° C. When the oxide insulating film 457 is formed by a sputteringmethod to be in contact with the low-resistance oxide semiconductorlayer 484, in the low-resistance oxide semiconductor layer 484, at leasta region in contact with the oxide insulating film 457 which is asilicon oxide film have increased resistance (i.e., the carrierconcentration is reduced, preferably to lower than 1×10¹⁸/cm³). Thus, ahigh-resistance oxide semiconductor region can be obtained. During amanufacture process of a semiconductor device, it is important toincrease and decrease the carrier concentration in the oxidesemiconductor layer by performance of heat treatment and slow coolingunder an inert-gas atmosphere (or under reduced pressure), formation ofan oxide insulating film, and the like. The oxide semiconductor layer484 becomes the semiconductor layer 453 having the high-resistance oxidesemiconductor region (a third oxide semiconductor layer), and then, thethin film transistor 460 can be completed (see FIG. 8D).

Impurities (such as H₂O, H, and OH) contained in the oxide semiconductorlayer are reduced by performance of heat treatment for dehydration ordehydrogenation, and the carrier concentration is increased. After that,slow cooling is performed. Then, formation of an oxide insulating filmin contact with the oxide semiconductor layer, or the like, isperformed, so that the carrier concentration of the oxide semiconductorlayer is reduced. Thus, reliability of the thin film transistor 460 canbe improved.

Further, after formation of the silicon oxide film as the oxideinsulating film 457, heat treatment may be performed on the thin filmtransistor 460, under a nitrogen atmosphere or an air atmosphere (inair) at temperature equal to or higher than 150° C. and lower than 350°C., preferably. For example, heat treatment is performed under anitrogen atmosphere at 250° C. for one hour. In such heat treatment, thesemiconductor layer 453 in a condition being in contact with the oxideinsulating film 457 is heated; thus, variation in electriccharacteristics of the thin film transistor 460 can be reduced. There isno particular limitation on when to perform this heat treatment (atequal to or higher than 150° C. and lower than 350° C., preferably) aslong as it is performed after the oxide insulating film 457 is formed.When this heat treatment also serves as heat treatment in another step,e.g., heat treatment in formation of a resin film or heat treatment forreducing resistance of a transparent conductive film, the number ofsteps can be prevented from increasing.

This embodiment can be freely combined with Embodiment 1.

Embodiment 3

A manufacturing process of a semiconductor device including a thin filmtransistor will be described with reference to FIGS. 10A to 10D, FIGS.11A to 11C, FIG. 12, and FIGS. 13A1, 13A2, 13B1, and 13B2.

In FIG. 10A, as a substrate 100 having a light-transmitting property, aglass substrate of barium borosilicate glass, aluminoborosilicate glass,or the like can be used.

Next, a conductive layer is formed over an entire surface of thesubstrate 100, and then a first photolithography step is performed. Aresist mask is formed, and then an unnecessary portion is removed byetching, so that wirings and electrodes (a gate wiring including a gateelectrode layer 101, a capacitor wiring 108, and a first terminal 121)are formed. At this time, the etching is performed so that at least endportions of the gate electrode layer 101 have a tapered shape.

Each of the gate wiring including the gate electrode layer 101, thecapacitor wiring 108, and the first terminal 121 at a terminal portionis preferably formed using a heat-resistant conductive material such asan element selected from titanium (Ti), tantalum (Ta), tungsten (W),molybdenum (Mo), chromium (Cr), neodymium (Nd), and scandium (Sc); analloy containing any of these elements as its component; an alloy filmcontaining a combination of any of these elements; or a nitridecontaining any of these elements as its component.

Next, a gate insulating layer 102 is formed over the entire surface ofthe gate electrode layer 101. The gate insulating layer 102 is formed toa thickness of 50 to 250 nm by a PCVD method, a sputtering method, orthe like.

For example, as the gate insulating layer 102, a silicon oxide film isformed to a thickness of 100 nm by a sputtering method. Needless to say,the gate insulating layer 102 is not necessarily formed using such asilicon oxide film and may be formed to have a single-layer structure ora stacked-layer structure using another insulating film: a siliconoxynitride film, a silicon nitride film, an aluminum oxide film, atantalum oxide film, and the like.

Next, an oxide semiconductor film (an In—Ga—Zn—O-basednon-single-crystal film) is formed over the gate insulating layer 102.It is effective to form the In—Ga—Zn—O-based non-single-crystal filmwithout exposure to air after the plasma treatment because dust andmoisture do not adhere to the interface between the gate insulatinglayer and the semiconductor film. Here, the oxide semiconductor film isformed under an argon atmosphere, an oxygen atmosphere, or an atmosphereincluding both argon and oxygen under the conditions where the target isan oxide semiconductor target including In, Ga, and Zn (anIn—Ga—Zn—O-based oxide semiconductor target (In₂O₃:Ga₂O₃:ZnO=1:1:1))with a diameter of 8 inches, the distance between the substrate and thetarget is set to 170 mm, the pressure is set at 0.4 Pa, and the directcurrent (DC) power supply is set at 0.5 kW. Note that a pulse directcurrent (DC) power supply is preferable because dust can be reduced andthe film thickness can be uniform. The second In—Ga—Zn—O-basednon-single-crystal film is formed to have a thickness of 5 nm to 200 nm.As the oxide semiconductor film, a 50-nm-thick In—Ga—Zn—O-basednon-single-crystal film is formed by a sputtering method using anIn—Ga—Zn—O-based oxide semiconductor target.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method, and a pulsed DC sputtering method in which a bias isapplied in a pulsed manner. An RF sputtering method is mainly used inthe case where an insulating film is formed, and a DC sputtering methodis mainly used in the case where a metal film is formed.

In addition, there is a multi-source sputtering apparatus in which aplurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or a film of plural kinds ofmaterials can be deposited by electric discharge at the same time in thesame chamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber and used for a magnetron sputtering, and asputtering apparatus used for an ECR sputtering in which plasmagenerated with the use of microwaves is used without using glowdischarge.

Furthermore, as a deposition method using sputtering, there are also areactive sputtering method in which a target substance and a sputteringgas component are chemically reacted with each other during depositionto form a thin compound film thereof, and a bias sputtering in which avoltage is also applied to a substrate during deposition.

Next, a second photolithography step is performed. A resist mask isformed, and then the oxide semiconductor film is etched. For example,unnecessary portions are removed by wet etching using a mixed solutionof phosphoric acid, acetic acid, and nitric acid, so that an oxidesemiconductor layer 133 is formed (see FIG. 10A). Note that etching hereis not limited to wet etching but dry etching may also be performed.

As the etching gas for dry etching, a gas containing chlorine(chlorine-based gas such as chlorine (Cl₂), boron chloride (BCl₃),silicon chloride (SiCl₄), or carbon tetrachloride (CCl₄)) is preferablyused.

Alternatively, a gas containing fluorine (fluorine-based gas such ascarbon tetrafluoride (CF₄), sulfur fluoride (SF₆), nitrogen fluoride(NF₃), or trifluoromethane (CHF₃)); hydrogen bromide (HBr); oxygen (O₂);any of these gases to which a rare gas such as helium (He) or argon (Ar)is added; or the like can be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the films into desired shapes, the etchingcondition (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on asubstrate side, the temperature of the electrode on the substrate side,or the like) is adjusted as appropriate.

As an etchant used for wet etching, a solution obtained by mixingphosphoric acid, acetic acid, and nitric acid, or the like can be used.In addition, ITO07N (produced by KANTO CHEMICAL CO., INC.) may also beused.

The etchant used in the wet etching is removed by cleaning together withthe material which is etched off. Waste liquid of the etchant containingthe removed materials may be purified to recycle the materials containedin the waste liquid. When a material such as indium included in theoxide semiconductor layer is collected from the waste liquid after theetching and reused, the resources can be efficiently used and the costcan be reduced.

The etching conditions (such as an etchant, etching time, andtemperature) are appropriately adjusted depending on the material sothat the material can be etched into a desired shape.

Next, heat treatment for dehydration or dehydrogenation is performed onthe oxide semiconductor layer 133. After heat treatment performed underan inert gas (such as nitrogen, helium, neon, or argon) atmosphere orunder reduced pressure for the oxide semiconductor layer 133, slowcooling is performed under an inert atmosphere.

Heat treatment is preferably performed at a temperature of 200° C. orhigher. For example, heat treatment is performed for 1 hour at 450° C.under a nitrogen atmosphere. By the heat treatment under a nitrogenatmosphere, resistance of the oxide semiconductor layer 133 is reduced(i.e., the carrier concentration is increased, preferably to 1×10¹⁸/cm³or higher), which results in increase of conductivity of the oxidesemiconductor layer 133. Therefore, a low-resistance oxide semiconductorlayer 134 is formed (see FIG. 10B). Preferable electrical conductivityof the oxide semiconductor layer 134 is from 1×10⁻¹ S/cm to 1×10² S/cminclusive.

Next, a conductive film 132 is formed using a metal material over theoxide semiconductor layer 134 by a sputtering method or a vacuumevaporation method (see FIG. 10C).

As the material of the conductive film 132, an element selected from Al,Cr, Ta, Ti, Mo, and W, an alloy containing any of these elements as acomponent, an alloy film containing these elements in combination, andthe like can be given.

When heat treatment is performed after the conductive film 132 isformed, the conductive film preferably has heat resistance enough towithstand this heat resistance.

Next, a third photolithography step is performed. A resist mask isformed, and unnecessary portions are removed, so that source and drainelectrode layers 105 a and 105 b, and a second terminal 122 are formed(see FIG. 10D). Wet etching or dry etching is employed as an etchingmethod at this time. For example, when an aluminum film or analuminum-alloy film is used as the conductive film 132, wet etchingusing a mixed solution of phosphoric acid, acetic acid, and nitric acidcan be carried out. Here, by wet etching using an ammonia hydrogenperoxide mixture (with the ratio of hydrogenperoxide:ammonia:water=5:2:2), the conductive film 132 is etched to formthe source and drain electrode layers 105 a and 105 b. In this etchingstep, an exposed region of the oxide semiconductor layer 134 is alsopartly etched to form a semiconductor layer 135. Thus, a region of thesemiconductor layer 135, which lies between the source and drainelectrode layers 105 a and 105 b has a small thickness. In FIG. 10D,etching of the source and drain electrode layers 105 a and 105 b and thesemiconductor layer 135 are simultaneously conducted using dry etching;therefore, the end portions of the source and drain electrode layers 105a and 105 b are aligned with the end portions of the semiconductor layer135, so that a continuous structure is provided.

In the third photolithography step, the second terminal 122 which isformed from the same material as the source and drain electrode layers105 a and 105 b is left in a terminal portion. Note that the secondterminal 122 is electrically connected to a source wiring (a sourcewiring including the source or drain electrode layers 105 a or 105 b).

Further, by use of a resist mask having regions with plural thicknesses(typically, two different thicknesses) which is formed using amulti-tone mask, the number of resist masks can be reduced, resulting insimplified process and lower costs.

Next, the resist mask is removed and a protective insulating layer 107is formed to cover the gate insulating layer 102, the oxidesemiconductor layer 135, and the source and drain electrode layers 105 aand 105 b. The protective insulating layer 107 is formed using a siliconoxynitride film by a PCVD method. When an exposed region of the oxidesemiconductor layer 135 which lies between the source and drainelectrode layers 105 a and 105 b is provided to be in contact with theoxynitride film that is the protective insulating layer 107, in theoxide semiconductor layer 135, a region in contact with the protectiveinsulating layer 107 has increased resistance (i.e., the carrierconcentration is reduced, preferably to lower than 1×10¹⁸/cm³). Thus, asemiconductor layer 103 having a high-resistance channel formationregion can be formed (see FIG. 11A).

Heat treatment may be performed under an oxygen atmosphere beforeformation of the protective insulating layer 107. The heat treatmentunder an oxygen atmosphere may be performed at a temperature higher thanor equal to 150° C. and lower than 350° C.

Heat treatment may be performed after formation of the protectiveinsulating layer 107. The heat treatment may be performed under an airatmosphere or a nitrogen atmosphere at a temperature higher than orequal to 150° C. and lower than 350° C. In such heat treatment, thesemiconductor layer 103 in a condition being in contact with the oxideinsulating layer 107 is heated, which leads to increase in resistance ofthe semiconductor layer 103; thus, electric characteristics of thetransistor can be improved and variation in electric characteristics canbe reduced. There is no particular limitation on when to perform thisheat treatment (at equal to or higher than 150° C. and lower than 350°C., preferably) as long as it is performed after the protectiveinsulating layer 107 is formed. When this heat treatment also serves asheat treatment in another step, e.g., heat treatment in formation of aresin film or heat treatment for reducing resistance of a transparentconductive film, the number of steps can be prevented from increasing.

Through the above steps, a thin film transistor 170 can be completed.

Next, a fourth photolithography step is performed. A resist mask isformed, and the protective insulating layer 107 and the gate insulatinglayer 102 are etched to form a contact hole 125 that reaches the drainelectrode layer 105 b. In addition, a contact hole 127 reaching thesecond terminal 122 and a contact hole 126 reaching the first terminal121 are also formed in the same etching step. A cross-sectional view atthis stage is illustrated in FIG. 11B.

Next, the resist mask is removed, and then a transparent conductive filmis formed. The transparent conductive film is formed of indium oxide(In₂O₃), indium oxide-tin oxide alloy (In₂O₃—SnO₂, abbreviated to ITO),or the like by a sputtering method, a vacuum evaporation method, or thelike. Such a material is etched with a hydrochloric acid-based solution.However, since a residue is easily generated particularly in etchingITO, indium oxide-zinc oxide alloy (In₂O₃—ZnO) may be used to improveetching processability. Further, when heat treatment for reducingresistance of the transparent conductive film, the heat treatment canserve as heat treatment for increasing resistance of the semiconductorlayer 103, which results in improvement of electric characteristics ofthe transistor and reduction of variation in the electriccharacteristics thereof.

Next, a fifth photolithography step is performed. A resist mask isformed, and an unnecessary portion of the transparent conductive film isremoved by etching to form a pixel electrode layer 110.

In the fifth photolithography step, a storage capacitor is formed withthe capacitor wiring 108 and the pixel electrode layer 110, in which thegate insulating layer 102 and the protective insulating layer 107 in thecapacitor portion are used as a dielectric.

In addition, in this fifth photolithography step, the first terminal 121and the second terminal 122 are covered with the resist mask, andtransparent conductive films 128 and 129 are left in the terminalportions. The transparent conductive films 128 and 129 function aselectrodes or wirings connected to an FPC. The transparent conductivefilm 128 formed over the first terminal 121 is a connecting terminalelectrode serving as an input terminal of a gate wiring. The transparentconductive film 129 formed over the second terminal 122 is a connectionterminal electrode which functions as an input terminal of the sourcewiring.

Then, the resist mask is removed. A cross-sectional view at this stageis illustrated in FIG. 11C. Note that a plan view at this stagecorresponds to FIG. 12.

FIGS. 13A1 and 13A2 are respectively a cross-sectional view and a topview of a gate wiring terminal portion at this stage. FIG. 13A1 is across-sectional view taken along line C1-C2 of FIG. 13A2. In FIG. 13A1,a transparent conductive film 155 formed over a protective insulatinglayer 154 is a connection terminal electrode which functions as an inputterminal. Furthermore, in the terminal portion of FIG. 13A1, a firstterminal 151 made of the same material as the gate wiring and aconnection electrode layer 153 made of the same material as the sourcewiring overlap each other with a gate insulating layer 152 interposedtherebetween, and are electrically connected to each other through thetransparent conductive film 155. Note that a part of FIG. 11C where thetransparent conductive film 128 is in contact with the first terminal121 corresponds to a part of FIG. 13A1 where the transparent conductivefilm 155 is in contact with the first terminal 151.

FIGS. 13B1 and 13B2 are respectively a cross-sectional view and a topview of a source wiring terminal portion which is different from thatillustrated in FIG. 11C. Moreover, FIG. 13B1 corresponds to across-sectional view taken along line F1-F2 of FIG. 13B2. In FIG. 13B1,a transparent conductive film 155 formed over a protective insulatinglayer 154 is a connection terminal electrode which functions as an inputterminal. Furthermore, in FIG. 13B1, in the terminal portion, anelectrode layer 156 formed from the same material as the gate wiring islocated below and overlapped with a second terminal 150, which iselectrically connected to the source wiring, with a gate insulatinglayer 152 interposed therebetween. The electrode layer 156 is notelectrically connected to the second terminal 150, and a capacitor toprevent noise or static electricity can be formed if the potential ofthe electrode layer 156 is set to a potential different from that of thesecond terminal 150, such as floating, GND, or 0 V. The second terminal150 is electrically connected to the transparent conductive film 155through the protective insulating layer 154.

A plurality of gate wirings, source wirings, and capacitor wirings areprovided depending on the pixel density. Also in the terminal portion, aplurality of first terminals at the same potential as the gate wiring, aplurality of second terminals at the same potential as the sourcewiring, a plurality of third terminals at the same potential as thecapacitor wiring, and the like are arranged. The number of each of theterminals may be any number, and the number of the terminals may bedetermined by a practitioner as appropriate.

Through these five photolithography steps, the storage capacitor and apixel thin film transistor portion including the thin film transistor170 which is a bottom-gate staggered thin film transistor can becompleted using the five photomasks. By disposing the thin filmtransistor and the storage capacitor in each pixel of a pixel portion inwhich pixels are arranged in a matrix form, one of substrates formanufacturing an active matrix display device can be obtained. In thisspecification, such a substrate is referred to as an active matrixsubstrate for convenience.

In the case of manufacturing an active matrix liquid crystal displaydevice, an active matrix substrate and a counter substrate provided witha counter electrode are bonded to each other with a liquid crystal layerinterposed therebetween. Note that a common electrode electricallyconnected to the counter electrode on the counter substrate is providedover the active matrix substrate, and a fourth terminal electricallyconnected to the common electrode is provided in the terminal portion.The fourth terminal is provided so that the common electrode is set to afixed potential such as GND or 0 V.

Instead of providing the capacitor wiring, the pixel electrode may beoverlapped with a gate wiring of an adjacent pixel with the protectiveinsulating layer and the gate insulating layer interposed therebetween,so that a storage capacitor is formed.

In an active matrix liquid crystal display device, pixel electrodesarranged in a matrix form are driven to form a display pattern on ascreen. Specifically, voltage is applied between a selected pixelelectrode and a counter electrode corresponding to the pixel electrode,so that a liquid crystal layer provided between the pixel electrode andthe counter electrode is optically modulated and this optical modulationis recognized as a display pattern by an observer.

In displaying moving images, a liquid crystal display device has aproblem that a long response time of liquid crystal molecules themselvescauses afterimages or blurring of moving images. In order to improve themoving-image characteristics of a liquid crystal display device, adriving method called black insertion is employed in which black isdisplayed on the whole screen every other frame period.

Alternatively, a driving method called double-frame rate driving may beemployed in which a vertical synchronizing frequency is 1.5 times ormore, preferably, 2 times or more as high as a usual verticalsynchronizing frequency to improve the moving-image characteristics.

Further alternatively, in order to improve the moving-imagecharacteristics of a liquid crystal display device, a driving method maybe employed, in which a plurality of LEDs (light-emitting diodes) or aplurality of EL light sources are used to form a surface light source asa backlight, and each light source of the surface light source isindependently driven in a pulsed manner in one frame period. As thesurface light source, three or more kinds of LEDs may be used and an LEDemitting white light may be used. Since a plurality of LEDs can becontrolled independently, the light emission timing of LEDs can besynchronized with the timing at which a liquid crystal layer isoptically modulated. According to this driving method, LEDs can bepartly turned off; therefore, an effect of reducing power consumptioncan be obtained particularly in the case of displaying an image having alarge part on which black is displayed.

By combining these driving methods, the display characteristics of aliquid crystal display device, such as moving-image characteristics, canbe improved as compared to those of conventional liquid crystal displaydevices.

The n-channel transistor disclosed in this specification includes anoxide semiconductor film which is used for a channel formation regionand has excellent dynamic characteristics; thus, it can be combined withthese driving techniques.

In manufacturing a light-emitting display device, one electrode (alsoreferred to as a cathode) of an organic light-emitting element is set toa low power supply potential such as GND or 0 V; thus, a terminalportion is provided with a fourth terminal for setting the cathode to alow power supply potential such as GND or 0 V. Also in manufacturing alight-emitting display device, a power supply line is provided inaddition to a source wiring and a gate wiring. Accordingly, the terminalportion is provided with a fifth terminal electrically connected to thepower supply line.

When a light-emitting display device is manufactured, a partition formedusing an organic resin layer may be provided between organiclight-emitting elements in some cases. In such cases, the organic resinlayer is subjected to heat treatment, and the heat treatment can serveas heat treatment for improvement of electric characteristics andreduction of variation in electric characteristics of the transistor byincreasing resistance of the semiconductor layer 103.

The use of an oxide semiconductor for a thin film transistor leads toreduction in manufacturing cost. In particular, since impurities such asmoisture are reduced for increasing purity of the oxide semiconductorfilm by heat treatment for dehydration or dehydrogenation, it is notnecessary to use a ultrapure oxide semiconductor target and a specialsputtering apparatus provided with a deposition chamber whose dew pointis lowered. Further, a semiconductor device including a highly reliablethin film transistor with excellent electric characteristics can bemanufactured.

The channel formation region in the semiconductor layer is ahigh-resistance region; thus, electric characteristics of the thin filmtransistor are stabilized and increase in off current can be prevented.Therefore, a semiconductor device including a thin film transistorhaving high electric characteristics and high reliability can beprovided.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Embodiment 4

In this embodiment, an example of a display device which is one exampleof a semiconductor device will be described. In the display device, atleast a part of a driver circuit and a thin film transistor to bedisposed in a pixel portion are formed over one substrate.

The thin film transistor in the pixel portion is formed according to anyof Embodiments 1 to 3. The thin film transistor described in any ofEmbodiments 1 to 3 is an n-channel TFT; therefore, part of a drivercircuit which can be formed using an n-channel TFT is formed over thesame substrate as the thin film transistor of the pixel portion.

FIG. 20A illustrates an example of a block diagram of an active matrixliquid crystal display device, which is an example of a semiconductordevice. The display device illustrated in FIG. 20A includes, over asubstrate 5300, a pixel portion 5301 including a plurality of pixelseach provided with a display element, a scan line driver circuit 5302that selects a pixel, and a signal line driver circuit 5303 thatcontrols a video signal input to a selected pixel.

The pixel portion 5301 is connected to the signal line driver circuit5303 by a plurality of signal lines S1 to Sm (not shown) which extend ina column direction from the signal line driver circuit 5303, and to thescan line driver circuit 5302 by a plurality of scan lines G1 to Gn (notshown) that extend in a row direction from the scan line driver circuit5302. Then, each pixel is connected to a signal line Sj (any one of thesignal lines S1 to Sm) and a scan line Gi (any one of the scan lines G1to Gn).

In addition, the thin film transistor described in each of Embodiments 1to 3 is an n-channel TFT, and a signal line driver circuit including then-channel TFT is described with reference to FIG. 21.

The signal line driver circuit illustrated in FIG. 21 includes a driverIC 5601, switch groups 5602_1 to 5602_M, a first wiring 5611, a secondwiring 5612, a third wiring 5613, and wirings 5621_1 to 5621_M. Each ofthe switch groups 5602_1 to 5602_M includes a first thin film transistor5603 a, a second thin film transistor 5603 b, and a third thin filmtransistor 5603 c.

The driver IC 5601 is connected to the first wiring 5611, the secondwiring 5612, the third wiring 5613, and the wirings 5621_1 to 5621_M.Each of the switch groups 5602_1 to 5602_M is connected to the firstwiring 5611, the second wiring 5612, and the third wiring 5613, and thewirings 5621_1 to 5621_M are connected to the switch groups 5602_1 to5602_M, respectively. Each of the wirings 5621_1 to 5621_M is connectedto three signal lines via the first thin film transistor 5603 a, thesecond thin film transistor 5603 b, and the third thin film transistor5603 c. For example, the wiring 5621_J of the J-th column (one of thewirings 5621_1 to 5621_M) is connected to a signal line Sj−1, a signalline Sj, and a signal line Sj+1 via the first thin film transistor 5603a, the second thin film transistor 5603 b, and the third thin filmtransistor 5603 c which are included in the switch group 5602_J.

A signal is input to each of the first wiring 5611, the second wiring5612, and the third wiring 5613.

Note that the driver IC 5601 is preferably formed over a singlecrystalline substrate. Further, the switch groups 5602_1 to 5602_M arepreferably formed over the same substrate as the pixel portion.Therefore, the driver IC 5601 and the switch groups 5602_1 to 5602_M arepreferably connected through an FPC or the like.

Next, the operation of the signal line driver circuit illustrated inFIG. 21 is described with reference to a timing chart of FIG. 22. FIG.22 illustrates the timing chart where a scan line Gi of the i-th row isselected. A selection period of the scan line Gi of the i-th row isdivided into a first sub-selection period T1, a second sub-selectionperiod T2, and a third sub-selection period T3. In addition, the signalline driver circuit in FIG. 21 operates similarly to that in FIG. 22even when a scan line of another row is selected.

Note that the timing chart in FIG. 22 shows the case where the wiring5621_J of the J-th column is connected to the signal line Sj−1, thesignal line Sj, and the signal line Sj+1 through the first thin filmtransistor 5603 a, the second thin film transistor 5603 b, and the thirdthin film transistor 5603 c.

The timing chart of FIG. 22 shows timing when the scan line Gi of thei-th row is selected, timing 5703 a when the first thin film transistor5603 a is turned on/off, timing 5703 b when the second thin filmtransistor 5603 b is turned on/off, timing 5703 c when the third thinfilm transistor 5603 c is turned on/off, and a signal 5721_J input tothe wiring 5621_J of the J-th column.

In the first sub-selection period T1, the second sub-selection periodT2, and the third sub-selection period T3, different video signals areinput to the wirings 5621_1 to 5621_M. For example, a video signal inputto the wiring 5621_J in the first sub-selection period T1 is input tothe signal line Sj−1, a video signal input to the wiring 5621_J in thesecond sub-selection period T2 is input to the signal line Sj, and avideo signal input to the wiring 5621_J in the third sub-selectionperiod T3 is input to the signal line Sj+1. In addition, the videosignals input to the wiring 5621_J in the first sub-selection period T1,the second sub-selection period T2, and the third sub-selection periodT3 are denoted by Data_j−1, Data_j, and Data_j+1.

As shown in FIG. 22, in the first sub-selection period T1, the firstthin film transistor 5603 a is turned on, and the second thin filmtransistor 5603 b and the third thin film transistor 5603 c are turnedoff. At this time, Data_j−1 input to the wiring 5621_J is input to thesignal line Sj−1 via the first thin film transistor 5603 a. In thesecond sub-selection period T2, the second thin film transistor 5603 bis turned on, and the first thin film transistor 5603 a and the thirdthin film transistor 5603 c are turned off. At this time, Data_j inputto the wiring 5621_J is input to the signal line Sj via the second thinfilm transistor 5603 b. In the third sub-selection period T3, the thirdthin film transistor 5603 c is turned on, and the first thin filmtransistor 5603 a and the second thin film transistor 5603 b are turnedoff. At this time, Data_j+1 input to the wiring 5621_J is input to thesignal line Sj+1 via the third thin film transistor 5603 c.

As described above, in the signal line driver circuit in FIG. 21, bydividing one gate selection period into three, video signals can beinput to three signal lines from one wiring 5621 in one gate selectionperiod. Therefore, in the signal line driver circuit in FIG. 21, thenumber of connections of the substrate provided with the driver IC 5601and the substrate provided with the pixel portion can be approximately ⅓of the number of signal lines. The number of connections is decreased toapproximately ⅓ of the number of the signal lines, so that reliability,yield, etc., of the signal line driver circuit in FIG. 21 can beimproved.

Note that there are no particular limitations on the arrangement, thenumber, a driving method, and the like of the thin film transistors, aslong as one gate selection period is divided into a plurality ofsub-selection periods and video signals are input to a plurality ofsignal lines from one wiring in respective sub-selection periods asshown in FIG. 21.

For example, when video signals are input to three or more signal linesfrom one wiring in three or more sub-selection periods, it is onlynecessary to add a thin film transistor and a wiring for controlling thethin film transistor. Note that when one gate selection period isdivided into four or more sub-selection periods, one sub-selectionperiod becomes shorter. Therefore, one gate selection period ispreferably divided into two or three sub-selection periods.

As another example, as shown in a timing chart of FIG. 23, one selectionperiod may be divided into a pre-charge period Tp, the firstsub-selection period T1, the second sub-selection period T2, and thethird sub-selection period T3. The timing chart in FIG. 23 shows timingat which the scan line Gi of the i-th row is selected, timing 5803 a ofon/off of the first thin transistor 5603 a, timing 5803 b of on/off ofthe second thin transistor 5603 b, timing 5803 c of on/off of the thirdthin transistor 5603 c, and a signal 5821_J input to the wiring 5621_Jof the J-th column. As shown in FIG. 23, the first thin film transistor5603 a, the second thin film transistor 5603 b, and the third thin filmtransistor 5603 c are turned on in the pre-charge period Tp. At thistime, pre-charge voltage Vp input to the wiring 5621_J is input to eachof the signal line Sj−1, the signal line Sj, and the signal line Sj+1via the first thin film transistor 5603 a, the second thin filmtransistor 5603 b, and the third thin film transistor 5603 c. In thefirst sub-selection period T1, the first thin film transistor 5603 a isturned on, and the second thin film transistor 5603 b and the third thinfilm transistor 5603 c are turned off. At this time, Data_j−1 input tothe wiring 5621_J is input to the signal line Sj−1 via the first thinfilm transistor 5603 a. In the second sub-selection period T2, thesecond thin film transistor 5603 b is turned on, and the first thin filmtransistor 5603 a and the third thin film transistor 5603 c are turnedoff. At this time, Data_j input to the wiring 5621_J is input to thesignal line Sj via the second thin film transistor 5603 b. In the thirdsub-selection period T3, the third thin film transistor 5603 c is turnedon, and the first thin film transistor 5603 a and the second thin filmtransistor 5603 b are turned off. At this time, Data_j+1 input to thewiring 5621_J is input to the signal line Sj+1 via the third thin filmtransistor 5603 c.

As described above, in the signal line driver circuit of FIG. 21, towhich the timing chart of FIG. 23 is applied, the signal line can bepre-charged by providing the pre-charge period before the sub-selectionperiods. Thus, a video signal can be written to a pixel with high speed.Note that portions in FIG. 23 which are similar to those of FIG. 22 aredenoted by common reference numerals and detailed description of thesame portions and portions which have similar functions is omitted.

Further, a structure of a scan line driver circuit is described. Thescan line driver circuit includes a shift register. The scan line drivermay be provided with a level shifter, a buffer, a switch, and the likeas necessary, or may include only a shift register. In the scan linedriver circuit, when the clock signal (CLK) and the start pulse signal(SP) are input to the shift register, a selection signal is generated.The generated selection signal is buffered and amplified by the buffer,and the resulting signal is supplied to a corresponding scan line. Gateelectrodes of transistors in pixels of one line are connected to thescan line. Since the transistors in the pixels of one line have to beturned on all at once, a buffer which can supply a large current isused.

One mode of a shift register used for a part of the scan line drivercircuit will be described with reference to FIG. 24 and FIG. 25.

FIG. 24 shows a circuit configuration of the shift register. The shiftregister shown in FIG. 24 includes a plurality of flip-flops: flip-flops5701_1 to 5701_n. The shift register operates with input of a firstclock signal, a second clock signal, a start pulse signal, and a resetsignal.

Connection relations of the shift register in FIG. 24 are described. Inthe flip-flop 5701_i (one of the flip-flops 5701_1 to 5701_n) of thei-th stage in the shift register of FIG. 24, a first wiring 5501 shownin FIG. 25 is connected to a seventh wiring 5717_i−1; a second wiring5502 shown in FIG. 25 is connected to a seventh wiring 5717_i+1; a thirdwiring 5503 shown in FIG. 25 is connected to a seventh wiring 5717_i;and a sixth wiring 5506 shown in FIG. 25 is connected to a fifth wiring5715.

Further, a fourth wiring 5504 shown in FIG. 25 is connected to a secondwiring 5712 in flip-flops of odd-numbered stages, and is connected to athird wiring 5713 in flip-flops of even-numbered stages. A fifth wiring5505 shown in FIG. 25 is connected to a fourth wiring 5714.

Note that the first wiring 5501 of the first stage flip-flop 5701_1shown in FIG. 25 is connected to a first wiring 5711. Moreover, thesecond wiring 5502 of the n-th stage flip-flop 5701_n shown in FIG. 25is connected to a sixth wiring 5716.

Note that the first wiring 5711, the second wiring 5712, the thirdwiring 5713, and the sixth wiring 5716 may be referred to as a firstsignal line, a second signal line, a third signal line, and a fourthsignal line, respectively. The fourth wiring 5714 and the fifth wiring5715 may be referred to as a first power supply line and a second powersupply line, respectively.

Next, FIG. 25 shows details of the flip-flop shown in FIG. 24. Aflip-flop shown in FIG. 25 includes a first thin film transistor 5571, asecond thin film transistor 5572, a third thin film transistor 5573, afourth thin film transistor 5574, a fifth thin film transistor 5575, asixth thin film transistor 5576, a seventh thin film transistor 5577,and an eighth thin film transistor 5578. Each of the first thin filmtransistor 5571, the second thin film transistor 5572, the third thinfilm transistor 5573, the fourth thin film transistor 5574, the fifththin film transistor 5575, the sixth thin film transistor 5576, theseventh thin film transistor 5577, and the eighth thin film transistor5578 is an n-channel transistor and is turned on when the gate-sourcevoltage (V_(gs)) exceeds the threshold voltage (V_(th)).

Now a connection structure of the flip-flop shown in FIG. 24 isdescribed below.

A first electrode (one of a source electrode and a drain electrode) ofthe first thin film transistor 5571 is connected to the fourth wiring5504. A second electrode (the other of the source electrode and thedrain electrode) of the first thin film transistor 5571 is connected tothe third wiring 5503.

A first electrode of the second thin film transistor 5572 is connectedto the sixth wiring 5506. A second electrode of the second thin filmtransistor 5572 is connected to the third wiring 5503.

A first electrode of the third thin film transistor 5573 is connected tothe fifth wiring 5505, and a second electrode of the third thin filmtransistor 5573 is connected to a gate electrode of the second thin filmtransistor 5572. A gate electrode of the third thin film transistor 5573is connected to the fifth wiring 5505.

A first electrode of the fourth thin film transistor 5574 is connectedto the sixth wiring 5506. A second electrode of the fourth thin filmtransistor 5574 is connected to a gate electrode of the second thin filmtransistor 5572. A gate electrode of the fourth thin film transistor5574 is connected to a gate electrode of the first thin film transistor5571.

A first electrode of the fifth thin film transistor 5575 is connected tothe fifth wiring 5505. A second electrode of the fifth thin filmtransistor 5575 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the fifth thin film transistor5575 is connected to the first wiring 5501.

A first electrode of the sixth thin film transistor 5576 is connected tothe sixth wiring 5506. A second electrode of the sixth thin filmtransistor 5576 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the sixth thin film transistor5576 is connected to the gate electrode of the second thin filmtransistor 5572.

A first electrode of the seventh thin film transistor 5577 is connectedto the sixth wiring 5506. A second electrode of the seventh thin filmtransistor 5577 is connected to the gate electrode of the first thinfilm transistor 5571. A gate electrode of the seventh thin filmtransistor 5577 is connected to the second wiring 5502. A firstelectrode of the eighth thin film transistor 5578 is connected to thesixth wiring 5506. A second electrode of the eighth thin film transistor5578 is connected to the gate electrode of the second thin filmtransistor 5572. A gate electrode of the eighth thin film transistor5578 is connected to the first wiring 5501.

Note that the points at which the gate electrode of the first thin filmtransistor 5571, the gate electrode of the fourth thin film transistor5574, the second electrode of the fifth thin film transistor 5575, thesecond electrode of the sixth thin film transistor 5576, and the secondelectrode of the seventh thin film transistor 5577 are connected areeach referred to as a node 5543. The points at which the gate electrodeof the second thin film transistor 5572, the second electrode of thethird thin film transistor 5573, the second electrode of the fourth thinfilm transistor 5574, the gate electrode of the sixth thin filmtransistor 5576, and the second electrode of the eighth thin filmtransistor 5578 are connected are each referred to as a node 5544.

Note that the first wiring 5501, the second wiring 5502, the thirdwiring 5503, and the fourth wiring 5504 may be referred to as a firstsignal line, a second signal line, a third signal line, and a fourthsignal line, respectively. The fifth wiring 5505 and the sixth wiring5506 may be referred to as a first power supply line and a second powersupply line, respectively.

Moreover, the signal line driver circuit and the scan line drivercircuit can be manufactured using only the n-channel TFTs described inany of Embodiments 1 to 3. The n-channel TFT described in any one ofEmbodiments 1 to 3 has a high mobility, and thus a driving frequency ofa driver circuit can be increased. Further, in the case of the n-channelTFT described in any of Embodiments 1 to 3, since parasitic capacitanceis reduced, frequency characteristics (also referred to as fcharacteristics) are excellent. For example, a scan line driver circuitusing the n-channel TFT described in any of Embodiments 1 to 3 canoperate at high speed, and thus a frame frequency can be increased andinsertion of black images and the like can be realized.

In addition, when the channel width of the transistor in the scan linedriver circuit is increased or a plurality of scan line driver circuitsare provided, for example, higher frame frequency can be realized. Whena plurality of scan line driver circuits are provided, a scan linedriver circuit for driving scan lines of even-numbered rows is providedon one side and a scan line driver circuit for driving scan lines ofodd-numbered rows is provided on the opposite side; thus, an increase inframe frequency can be realized. Furthermore, the use of the pluralityof scan line driver circuits for output of signals to the same scan lineis advantageous in increasing the size of a display device.

Further, when an active matrix light-emitting display device which is anexample of a semiconductor device is manufactured, a plurality of thinfilm transistors are arranged in at least one pixel, and thus aplurality of scan line driver circuits are preferably arranged. FIG. 20Billustrates an example of a block diagram of an active matrixlight-emitting display device.

The display device illustrated in FIG. 20B includes, over a substrate5400, a pixel portion 5401 having a plurality of pixels each providedwith a display element, a first scan line driver circuit 5402 and asecond scan line driver circuit 5404 that select a pixel, and a signalline driver circuit 5403 that controls input of a video signal to theselected pixel.

When the video signal input to a pixel of the light-emitting displaydevice illustrated in FIG. 20B is a digital signal, a pixel is in alight-emitting state or in a non-light-emitting state by switching ofON/OFF of a transistor. Thus, grayscale can be displayed using an areagrayscale method or a time grayscale method. An area grayscale methodrefers to a driving method in which one pixel is divided into aplurality of subpixels and the respective subpixels are drivenindependently based on video signals so that grayscale is displayed.Further, a time grayscale method refers to a driving method in which aperiod during which a pixel emits light is controlled so that grayscaleis displayed.

Since the response time of a light-emitting element is higher than thatof a liquid crystal element or the like, the light-emitting element ismore suitable for a time grayscale method than the liquid crystalelement. Specifically, in the case of displaying with a time grayscalemethod, one frame period is divided into a plurality of subframeperiods. Then, in accordance with video signals, the light-emittingelement in the pixel is brought into a light-emitting state or anon-light-emitting state in each subframe period. By dividing one frameperiod into a plurality of subframe periods, the total length of time,in which a pixel actually emits light in one frame period, can becontrolled by video signals so that grayscale can be displayed.

Note that in the light-emitting display device shown in FIG. 20B, in thecase where one pixel includes two switching TFTs, a signal which isinput to a first scan line serving as a gate wiring of one of theswitching TFTs is generated in the first scan line driver circuit 5402and a signal which is input to a second scan line serving as a gatewiring of the other of the switching TFTs is generated in the secondscan line driver circuit 5404. However, the signal which is input to thefirst scan line and the signal which is input to the second scan linemay be generated together in one scan line driver circuit. In addition,for example, there is a possibility that a plurality of scan lines usedfor controlling the operation of the switching element are provided ineach pixel, depending on the number of the switching TFTs included inone pixel. In this case, one scan line driver circuit may generate allsignals that are input to the plurality of scan lines, or a plurality ofscan line driver circuits may generate signals that are input to theplurality of scan lines.

Also in the light-emitting display device, a part of a driver circuitthat can include n-channel TFTs among driver circuits can be formed overthe same substrate as the thin film transistors of the pixel portion.Moreover, the signal line driver circuit and the scan line drivercircuit can be manufactured using only the n-channel TFTs described inany of Embodiments 1 to 3.

Moreover, the above-described driver circuit can be used for anelectronic paper that drives electronic ink using an elementelectrically connected to a switching element, without being limited toapplications to a liquid crystal display device or a light-emittingdisplay device. The electronic paper is also referred to as anelectrophoretic display device (an electrophoretic display) and isadvantageous in that it has the same level of readability as plainpaper, it has lower power consumption than other display devices, and itcan be made thin and lightweight.

Electrophoretic displays can have various modes. Electrophoreticdisplays contain a plurality of microcapsules dispersed in a solvent ora solute, each microcapsule containing first particles which arepositively charged and second particles which are negatively charged. Byapplying an electric field to the microcapsules, the particles in themicrocapsules move in opposite directions to each other and only thecolor of the particles gathering on one side is displayed. Note that thefirst particles and the second particles each contain pigment and do notmove without an electric field. Moreover, the first particles and thesecond particles have different colors (which may be colorless).

Thus, an electrophoretic display is a display that utilizes a so-calleddielectrophoretic effect by which a substance having a high dielectricconstant moves to a high-electric field region. The electrophoreticdisplay does not require a polarizing plate which is necessary for aliquid crystal display device, so that the weight thereof is reduced.

A solution in which the above microcapsules are dispersed in a solventis referred to as electronic ink. This electronic ink can be printed ona surface of glass, plastic, cloth, paper, or the like. Furthermore, byusing a color filter or particles that have a pigment, color display canalso be achieved.

In addition, if a plurality of the above microcapsules are arranged asappropriate over an active matrix substrate so as to be interposedbetween two electrodes, an active matrix display device can becompleted, and display can be performed by application of an electricfield to the microcapsules. For example, the active matrix substrateobtained using the thin film transistor of any of Embodiments 1 to 3 canbe used.

Note that the first particles and the second particles in themicrocapsules may each be formed of a single material selected from aconductive material, an insulating material, a semiconductor material, amagnetic material, a liquid crystal material, a ferroelectric material,an electroluminescent material, an electrochromic material, and amagnetophoretic material, or formed of a composite material of any ofthese.

Through the above process, a highly reliable display device as asemiconductor device can be manufactured.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Embodiment 5

A thin film transistor is manufactured, and a semiconductor devicehaving a display function (also referred to as a display device) can bemanufactured using the thin film transistor in a pixel portion andfurther in a driver circuit. Further, part or whole of the drivercircuit can be formed over the same substrate as a pixel portion, usinga thin film transistor, whereby a system-on-panel can be obtained.

The display device includes a display element. As the display element, aliquid crystal element (also referred to as a liquid crystal displayelement) or a light-emitting element (also referred to as alight-emitting display element) can be used. The light-emitting elementincludes, in its category, an element whose luminance is controlled bythe current or the voltage, and specifically includes, in its category,an inorganic electroluminescent (EL) element, an organic EL element, andthe like. Furthermore, a display medium whose contrast is changed by anelectric effect, such as electronic ink, can be used.

In addition, the display device includes a panel in which the displayelement is sealed, and a module in which an IC or the like including acontroller is mounted on the panel. Furthermore, an element substrate,which corresponds to one embodiment before the display element iscompleted in a manufacturing process of the display device, is providedwith a means for supplying current to the display element in each of aplurality of pixels. Specifically, the element substrate may be in astate provided with only a pixel electrode of the display element, astate after a conductive film serving as a pixel electrode is formed andbefore the conductive film is etched to form the pixel electrode, or anyof other states.

Note that a display device in this specification means an image displaydevice, a display device, or a light source (including a lightingdevice). Further, the “display device” includes the following modules inits category: a module including a connector such as a flexible printedcircuit (FPC), a tape automated bonding (TAB) tape, or a tape carrierpackage (TCP) attached; a module having a TAB tape or a TCP which isprovided with a printed wiring board at the end thereof; and a modulehaving an integrated circuit (IC) which is directly mounted on a displayelement by a chip on glass (COG) method.

The appearance and a cross section of a liquid crystal display panel,which is one embodiment of a semiconductor device, will be describedwith reference to FIGS. 16A1, 16A2, and 16B. FIGS. 16A1 and 16A2 areeach a plan view of a panel in which highly reliable thin filmtransistors 4010 and 4011 each including the oxide semiconductor layerdescribed in Embodiment 3 and a liquid crystal element 4013 are sealedbetween a first substrate 4001 and a second substrate 4006 with asealant 4005. FIG. 16B is a cross-sectional view along line M-N in FIGS.16A1 and 16A2.

The sealant 4005 is provided so as to surround a pixel portion 4002 anda scan line driver circuit 4004 which are provided over the firstsubstrate 4001. The second substrate 4006 is provided over the pixelportion 4002 and the scan line driver circuit 4004. Therefore, the pixelportion 4002 and the scan line driver circuit 4004 are sealed togetherwith a liquid crystal layer 4008, by the first substrate 4001, thesealant 4005, and the second substrate 4006. A signal line drivercircuit 4003 that is formed using a single crystal semiconductor film ora polycrystalline semiconductor film over a substrate separatelyprepared is mounted in a region that is different from the regionsurrounded by the sealant 4005 over the first substrate 4001.

Note that the connection method of a driver circuit which is separatelyformed is not particularly limited, and a COG method, a wire bondingmethod, a TAB method, or the like can be used. FIG. 16A1 illustrates anexample of mounting the signal line driver circuit 4003 by a COG method,and FIG. 16A2 illustrates an example of mounting the signal line drivercircuit 4003 by a TAB method.

The pixel portion 4002 and the scan line driver circuit 4004 providedover the first substrate 4001 include a plurality of thin filmtransistors. FIG. 16B illustrates the thin film transistor 4010 includedin the pixel portion 4002 and the thin film transistor 4011 included inthe scan line driver circuit 4004. Over the thin film transistors 4010and 4011, insulating layers 4020 and 4021 are provided.

Any of the highly reliable thin film transistors including the oxidesemiconductor layer described in Embodiment 3, can be used as the thinfilm transistors 4010 and 4011. Alternatively, the thin film transistordescribed in Embodiment 1 or 2 may be applied. In this embodiment, thethin film transistors 4010 and 4011 are n-channel thin film transistors.

A pixel electrode layer 4030 included in the liquid crystal element 4013is electrically connected to the thin film transistor 4010. A counterelectrode layer 4031 of the liquid crystal element 4013 is provided forthe second substrate 4006. A portion where the pixel electrode layer4030, the counter electrode layer 4031, and the liquid crystal layer4008 overlap with one another corresponds to the liquid crystal element4013. Note that the pixel electrode layer 4030 and the counter electrodelayer 4031 are provided with an insulating layer 4032 and an insulatinglayer 4033 respectively which each function as an alignment film, andthe liquid crystal layer 4008 is sandwiched between the pixel electrodelayer 4030 and the counter electrode layer 4031 with the insulatinglayers 4032 and 4033 therebetween.

Note that the first substrate 4001 and the second substrate 4006 can beformed of glass, metal (typically, stainless steel), ceramic, orplastic. As plastic, a fiberglass-reinforced plastics (FRP) plate, apolyvinyl fluoride (PVF) film, a polyester film, or an acrylic resinfilm can be used. In addition, a sheet with a structure in which analuminum foil is sandwiched between PVF films or polyester films can beused.

Reference numeral 4035 denotes a columnar spacer obtained by selectivelyetching an insulating film and is provided to control the distancebetween the pixel electrode layer 4030 and the counter electrode layer4031 (a cell gap). Alternatively, a spherical spacer may also be used.In addition, the counter electrode layer 4031 is electrically connectedto a common potential line formed over the same substrate as the thinfilm transistor 4010. With use of the common connection portion, thecounter electrode layer 4031 and the common potential line can beelectrically connected to each other by conductive particles arrangedbetween a pair of substrates. Note that the conductive particles areincluded in the sealant 4005.

Alternatively, liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used. A blue phase is one of liquidcrystal phases, which is generated just before a cholesteric phasechanges into an isotropic phase while temperature of cholesteric liquidcrystal is increased. Since the blue phase is generated within an onlynarrow range of temperature, liquid crystal composition containing achiral agent at 5 wt % or more so as to improve the temperature range isused for the liquid crystal layer 4008. The liquid crystal compositionwhich includes liquid crystal exhibiting a blue phase and a chiral agenthave such characteristics that the response time is 1 msec or less,which is short, the alignment process is unnecessary because the liquidcrystal composition has optical isotropy, and viewing angle dependencyis small.

An embodiment of the present invention can also be applied to areflective liquid crystal display device or a semi-transmissive liquidcrystal display device, in addition to a transmissive liquid crystaldisplay device.

An example of the liquid crystal display device is described in which apolarizing plate is provided on the outer surface of the substrate (onthe viewer side) and a coloring layer and an electrode layer used for adisplay element are provided on the inner surface of the substrate;however, the polarizing plate may be provided on the inner surface ofthe substrate. The stacked structure of the polarizing plate and thecoloring layer is not limited to this embodiment and may be set asappropriate depending on materials of the polarizing plate and thecoloring layer or conditions of manufacturing process. Further, alight-blocking film serving as a black matrix may be provided.

In order to reduce surface unevenness of the thin film transistor and toimprove reliability of the thin film transistor, the thin filmtransistor obtained in any of the above embodiments is covered with theinsulating layers (the insulating layer 4020 and the insulating layer4021) functioning as a protective film or a planarizing insulating film.Note that the protective film is provided to prevent entry ofcontaminant impurities such as organic substance, metal, or moistureexisting in air and is preferably a dense film. The protective film maybe formed with a single layer or a stacked layer of a silicon oxidefilm, a silicon nitride film, a silicon oxynitride film, a siliconnitride oxide film, an aluminum oxide film, an aluminum nitride film, analuminum oxynitride film, and/or an aluminum nitride oxide film by asputtering method. Although an example in which the protective film isformed by a sputtering method is described in this embodiment, anembodiment of the present invention is not limited to this method and avariety of methods may be employed.

In this embodiment, the insulating layer 4020 having a stacked-layerstructure is formed as a protective film. Here, as a first layer of theinsulating layer 4020, a silicon oxide film is formed by a sputteringmethod. The use of a silicon oxide film as a protective film has aneffect of preventing hillock of an aluminum film used for the source anddrain electrode layers.

As a second layer of the protective film, an insulating layer is formed.In this embodiment, as a second layer of the insulating layer 4020, asilicon nitride film is formed by a sputtering method. The use of thesilicon nitride film as the protective film can prevent mobile ions suchas sodium ions from entering a semiconductor region, thereby suppressingvariations in electrical properties of the TFT.

In addition, after the protective film is formed, heat treatment (at300° C. or lower) may be performed under a nitrogen atmosphere or an airatmosphere.

The insulating layer 4021 is formed as the planarizing insulating film.As the insulating layer 4021, an organic material having heat resistancesuch as polyimide, acrylic, benzocyclobutene, polyamide, or epoxy can beused. Other than such organic materials, it is also possible to use alow-dielectric constant material (a low-k material), a siloxane-basedresin, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), orthe like. Note that the insulating layer 4021 may be formed by stackinga plurality of insulating films formed of these materials.

Note that the siloxane-based resin corresponds to a resin including aSi—O—Si bond formed using a siloxane-based material as a startingmaterial. The siloxane-based resin may include as a substituent anorganic group (e.g., an alkyl group or an aryl group) or a fluoro group.In addition, the organic group may include a fluoro group.

A formation method of the insulating layer 4021 is not particularlylimited, and the following method can be employed depending on thematerial: a sputtering method, an SOG method, a spin coating method, adipping method, a spray coating method, a droplet discharge method(e.g., an ink-jet method, screen printing, offset printing, or thelike), or the like. Further, the insulating layer 4021 can be formedwith a doctor knife, a roll coater, a curtain coater, a knife coater, orthe like. The baking step of the insulating layer 4021 also serves asannealing of the semiconductor layer, whereby a semiconductor device canbe manufactured efficiently.

The pixel electrode layer 4030 and the counter electrode layer 4031 canbe formed using a light-transmitting conductive material such as indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium tin oxide (hereinafter referred to asITO), indium zinc oxide, indium tin oxide to which silicon oxide isadded, or the like.

Conductive compositions including a conductive high molecule (alsoreferred to as a conductive polymer) can be used for the pixel electrodelayer 4030 and the counter electrode layer 4031. The pixel electrodeformed using the conductive composition preferably has a sheetresistance of less than or equal to 10000 ohms per square and atransmittance of greater than or equal to 70% at a wavelength of 550 nm.Further, the resistivity of the conductive high molecule included in theconductive composition is preferably less than or equal to 0.1 Ω·cm.

As the conductive high molecule, a so-called π-electron conjugatedconductive polymer can be used. For example, polyaniline or a derivativethereof, polypyrrole or a derivative thereof, polythiophene or aderivative thereof, a copolymer of two or more kinds of them, and thelike can be given.

Further, a variety of signals and potentials are supplied to the signalline driver circuit 4003 which is formed separately, the scan linedriver circuit 4004, or the pixel portion 4002 from an FPC 4018.

A connection terminal electrode 4015 is formed using the same conductivefilm as the pixel electrode layer 4030 included in the liquid crystalelement 4013. A terminal electrode 4016 is formed using the sameconductive film as the source and drain electrode layers included in thethin film transistors 4010 and 4011.

The connection terminal electrode 4015 is electrically connected to aterminal included in the FPC 4018 via an anisotropic conductive film4019.

Note that FIGS. 16A1, 16A2, and 16B illustrate an example in which thesignal line driver circuit 4003 is formed separately and mounted on thefirst substrate 4001; however, the present invention is not limited tothis structure. The scan line driver circuit may be separately formedand then mounted, or only part of the signal line driver circuit or partof the scan line driver circuit may be separately formed and thenmounted.

FIG. 26 illustrates an example in which a liquid crystal display moduleis formed as a semiconductor device using a TFT substrate 2600 which ismanufactured according to the manufacturing method disclosed in thisspecification.

FIG. 26 illustrates an example of a liquid crystal display module, inwhich the TFT substrate 2600 and a counter substrate 2601 are fixed toeach other with a sealant 2602, and a pixel portion 2603 including TFTsand the like, a display element 2604 including a liquid crystal layer,and a coloring layer 2605, are provided between the substrates to form adisplay region. The coloring layer 2605 is necessary to perform colordisplay. In the RGB system, respective coloring layers corresponding tocolors of red, green, and blue are provided for respective pixels.Polarizing plates 2606 and 2607 and a diffusion plate 2613 are providedoutside the TFT substrate 2600 and the counter substrate 2601. A lightsource includes a cold cathode tube 2610 and a reflective plate 2611,and a circuit board 2612 is connected to a wiring circuit portion 2608of the TFT substrate 2600 by a flexible wiring board 2609 and includesan external circuit such as a control circuit or a power source circuit.The polarizing plate and the liquid crystal layer may be stacked with aretardation plate therebetween.

The liquid crystal display module can employ a TN (Twisted Nematic)mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching)mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA (PatternedVertical Alignment) mode, an ASM (Axially Symmetric aligned Micro-cell)mode, an OCB (Optical Compensated Birefringence) mode, an FLC(Fenoelectric Liquid Crystal) mode, an AFLC (Anti Ferroelectric LiquidCrystal) mode, or the like.

Through the above process, a highly reliable liquid crystal displaypanel as a semiconductor device can be manufactured.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Embodiment 6

An example of an electronic paper will be described as a semiconductordevice.

The semiconductor device can be used for electronic paper in whichelectronic ink is driven by an element electrically connected to aswitching element.

The electronic paper is also referred to as an electrophoretic displaydevice (an electrophoretic display) and is advantageous in that it hasthe same level of readability as plain paper, it has lower powerconsumption than other display devices, and it can be made thin andlightweight.

Electrophoretic displays can have various modes. Electrophoreticdisplays contain a plurality of microcapsules dispersed in a solvent ora solute, each microcapsule containing first particles which arepositively charged and second particles which are negatively charged. Byapplying an electric field to the microcapsules, the particles in themicrocapsules move in opposite directions to each other and only thecolor of the particles gathering on one side is displayed. Note that thefirst particles and the second particles each contain pigment and do notmove without an electric field. Moreover, the first particles and thesecond particles have different colors (which may be colorless).

Thus, an electrophoretic display is a display that utilizes a so-calleddielectrophoretic effect by which a substance having a high dielectricconstant moves to a high-electric field region.

A solution in which the above microcapsules are dispersed in a solventis referred to as electronic ink. This electronic ink can be printed ona surface of glass, plastic, cloth, paper, or the like. Furthermore, byusing a color filter or particles that have a pigment, color display canalso be achieved.

In addition, if a plurality of the above microcapsules are arranged asappropriate over an active matrix substrate so as to be interposedbetween two electrodes, an active matrix display device can becompleted, and display can be performed by application of an electricfield to the microcapsules. For example, the active matrix substrateobtained using the thin film transistor of any of Embodiments 1 to 3 canbe used.

Note that the first particles and the second particles in themicrocapsules may each be formed of a single material selected from aconductive material, an insulating material, a semiconductor material, amagnetic material, a liquid crystal material, a ferroelectric material,an electroluminescent material, an electrochromic material, and amagnetophoretic material, or formed of a composite material of any ofthese.

FIG. 15 illustrates an active matrix electronic paper as an example of asemiconductor device. A thin film transistor 581 used for thesemiconductor device can be formed in a manner similar to the thin filmtransistor described in Embodiment 1, which is a highly reliable thinfilm transistor including an oxide semiconductor layer. Any of the thinfilm transistors described in Embodiment 2 or 3 can also be used as thethin film transistor 581 of this embodiment.

The electronic paper in FIG. 15 is an example of a display device usinga twisting ball display system. The twisting ball display system refersto a method in which spherical particles each colored in black and whiteare arranged between a first electrode layer and a second electrodelayer which are electrode layers used for a display element, and apotential difference is generated between the first electrode layer andthe second electrode layer to control orientation of the sphericalparticles, so that display is performed.

The thin film transistor 581 has a bottom-gate structure, which iscovered with an insulating film 583 in contact with the semiconductorlayer. A source electrode layer or a drain electrode layer of the thinfilm transistor 581 is in contact with a first electrode layer 587 at anopening formed in the insulating film 583 and an insulating layer 585,whereby the thin film transistor 581 is electrically connected to thefirst electrode layer 587. Between the first electrode layer 587 and asecond electrode layer 588, spherical particles 589 are provided. Eachspherical particle 589 includes a black region 590 a and a white region590 b, and a cavity 594 filled with liquid around the black region 590 aand the white region 590 b. The circumference of the spherical particle589 is filled with filler 595 such as a resin (see FIG. 15). In thisembodiment, the first electrode layer 587 corresponds to a pixelelectrode, and the second electrode layer 588, a common electrode. Thesecond electrode layer 588 is electrically connected to a commonpotential line provided over the same substrate 580 as the thin filmtransistor 581. With the use of a common connection portion, the secondelectrode layer 588 can be electrically connected to the commonpotential line via conductive particles provided between the pair ofsubstrates 580 and 596.

Further, instead of the twisting ball, an electrophoretic element canalso be used. A microcapsule having a diameter of about 10 μm to 200 μmin which transparent liquid, positively charged white microparticles,and negatively charged black microparticles are encapsulated, is used.In the microcapsule which is provided between the first electrode layerand the second electrode layer, when an electric field is applied by thefirst electrode layer and the second electrode layer, the whitemicroparticles and the black microparticles move to opposite sides, sothat white or black can be displayed. A display element using thisprinciple is an electrophoretic display element and is called electronicpaper in general. The electrophoretic display element has higherreflectance than a liquid crystal display element, and thus, anauxiliary light is unnecessary, power consumption is low, and a displayportion can be recognized in a dim place. In addition, even when poweris not supplied to the display portion, an image which has beendisplayed once can be maintained. Accordingly, a displayed image can bestored even if a semiconductor device having a display function (whichmay be referred to simply as a display device or a semiconductor deviceprovided with a display device) is distanced from an electric wavesource.

Through this process, a highly reliable electronic paper as asemiconductor device can be manufactured.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Embodiment 7

An example of a light-emitting display device will be described as asemiconductor device. As a display element included in a display device,a light-emitting element utilizing electroluminescence is describedhere. Light-emitting elements utilizing electroluminescence areclassified according to whether a light-emitting material is an organiccompound or an inorganic compound. In general, the former is referred toas an organic EL element, and the latter is referred to as an inorganicEL element.

In an organic EL element, by application of voltage to a light-emittingelement, electrons and holes are separately injected from a pair ofelectrodes into a layer containing a light-emitting organic compound,and current flows. The carriers (electrons and holes) are recombined,and thus, the light-emitting organic compound is excited. Thelight-emitting organic compound returns to a ground state from theexcited state, thereby emitting light. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light emission that utilizes a donorlevel and an acceptor level. A thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light emission that utilizesinner-shell electron transition of metal ions. Note that an example ofan organic EL element as a light-emitting element is described here.

FIG. 18 illustrates an example of a pixel structure to which digitaltime grayscale driving can be applied, as an example of a semiconductordevice.

A structure and operation of a pixel to which digital time grayscaledriving can be applied are described. Here, one pixel includes twon-channel transistors each of which includes an oxide semiconductorlayer as a channel formation region.

A pixel 6400 includes a switching transistor 6401, a driver transistor6402, a light-emitting element 6404, and a capacitor 6403. A gate of theswitching transistor 6401 is connected to a scan line 6406, a firstelectrode (one of a source electrode and a drain electrode) of theswitching transistor 6401 is connected to a signal line 6405, and asecond electrode (the other of the source electrode and the drainelectrode) of the switching transistor 6401 is connected to a gate ofthe driver transistor 6402. The gate of the driver transistor 6402 isconnected to a power supply line 6407 via the capacitor 6403, a firstelectrode of the driver transistor 6402 is connected to the power supplyline 6407, and a second electrode of the driver transistor 6402 isconnected to a first electrode (pixel electrode) of the light-emittingelement 6404. A second electrode of the light-emitting element 6404corresponds to a common electrode 6408. The common electrode 6408 iselectrically connected to a common potential line provided over the samesubstrate.

The second electrode (common electrode 6408) of the light-emittingelement 6404 is set to a low power supply potential. Note that the lowpower supply potential is a potential satisfying that the low powersupply potential is lower than a high power supply potential (low powersupply potential<high power supply potential) based on the high powersupply potential that is set to the power supply line 6407. As the lowpower supply potential, GND, 0 V, or the like may be employed, forexample. A potential difference between the high power supply potentialand the low power supply potential is applied to the light-emittingelement 6404 and current is supplied to the light-emitting element 6404,so that the light-emitting element 6404 emits light. Here, in order tomake the light-emitting element 6404 emit light, each potential is setso that the potential difference between the high power supply potentialand the low power supply potential is a forward threshold voltage orhigher of the light-emitting element 6404.

Note that the gate capacitor of the driver transistor 6402 may be usedas a substitute for the capacitor 6403, so that the capacitor 6403 canbe omitted. The gate capacitance of the driver transistor 6402 may beformed between the channel region and the gate electrode.

In the case of a voltage-input voltage driving method, a video signal isinput to the gate of the driver transistor 6402 so that the drivertransistor 6402 is in either of two states of being sufficiently turnedon or turned off. That is, the driver transistor 6402 operates in alinear region. Since the driver transistor 6402 operates in the linearregion, a voltage higher than the voltage of the power supply line 6407is applied to the gate of the driver transistor 6402. Note that avoltage higher than or equal to the sum voltage of the power supply linevoltage and V_(th) of the driver transistor 6402 (voltage of the powersupply line+V_(th) of the driver transistor 6402) is applied to thesignal line 6405.

In a case of performing analog grayscale driving instead of digital timegrayscale driving, the same pixel structure as that in FIG. 18 can beused by changing signal input.

In the case of performing analog grayscale driving, a voltage higherthan or equal to the sum voltage of the light-emitting element 6404 andV_(th) of the driver transistor 6402 (forward voltage of thelight-emitting element 6404+V_(th) of the driver transistor 6402) isapplied to the gate of the driver transistor 6402. The forward voltageof the light-emitting element 6404 indicates a voltage at which adesired luminance is obtained, and includes at least forward thresholdvoltage. The video signal by which the driver transistor 6402 operatesin a saturation region is input, so that current can be supplied to thelight-emitting element 6404. In order for the driver transistor 6402 tooperate in the saturation region, the potential of the power supply line6407 is set higher than the gate potential of the driver transistor6402. When an analog video signal is used, it is possible to feedcurrent to the light-emitting element 6404 in accordance with the videosignal and perform analog grayscale driving.

Note that the pixel structure illustrated in FIG. 18 is not limitedthereto. For example, a switch, a resistor, a capacitor, a transistor, alogic circuit, or the like may be added to the pixel illustrated in FIG.18.

Next, structures of the light-emitting element will be described withreference to FIGS. 19A to 19C. Here, a cross-sectional structure of apixel will be described by taking an n-channel driving TFT as anexample. Driving TFTs 7001, 7011, and 7021 used in semiconductor devicesillustrated in FIGS. 19A, 19B, and 19C, respectively can be formed in amanner similar to the thin film transistor described in Embodiment 1 andare highly reliable thin film transistors each including an oxidesemiconductor layer. Alternatively, the thin film transistor describedin Embodiment 2 or 3 can be employed as the driving TFTs 7001, 7011, and7021.

In order to extract light emitted from the light-emitting element, atleast one of an anode and a cathode is required to transmit light. Athin film transistor and a light-emitting element are formed over asubstrate. A light-emitting element can have a top emission structure,in which light emission is extracted through the surface opposite to thesubstrate; a bottom emission structure, in which light emission isextracted through the surface on the substrate side; or a dual emissionstructure, in which light emission is extracted through the surfaceopposite to the substrate and the surface on the substrate side. Thepixel structure can be applied to a light-emitting element having any ofthese emission structures.

A light-emitting element having a top emission structure will bedescribed with reference to FIG. 19A.

FIG. 19A is a cross-sectional view of a pixel in the case where thedriving TFT 7001 is an n-channel TFT and light is emitted from alight-emitting element 7002 to an anode 7005 side. In FIG. 19A, acathode 7003 of the light-emitting element 7002 is electricallyconnected to the driving TFT 7001, and a light-emitting layer 7004 andthe anode 7005 are stacked in this order over the cathode 7003. Thecathode 7003 can be formed using a variety of conductive materials aslong as they have a low work function and reflect light. For example,Ca, Al, MgAg, AlLi, or the like is desirably used. The light-emittinglayer 7004 may be formed using a single layer or a plurality of layersstacked. When the light-emitting layer 7004 is formed using a pluralityof layers, the light-emitting layer 7004 is formed by stacking anelectron-injection layer, an electron-transport layer, a light-emittinglayer, a hole-transport layer, and a hole-inject layer in this orderover the cathode 7003. It is not necessary to form all of these layers.The anode 7005 is formed using a light-transmitting conductive film suchas a film of indium oxide containing tungsten oxide, indium zinc oxidecontaining tungsten oxide, indium oxide containing titanium oxide,indium tin oxide containing titanium oxide, indium tin oxide(hereinafter referred to as ITO), indium zinc oxide, or indium tin oxideto which silicon oxide is added.

The light-emitting element 7002 corresponds to a region where thelight-emitting layer 7004 is sandwiched between the cathode 7003 and theanode 7005. In the case of the pixel illustrated in FIG. 19A, light isemitted from the light-emitting element 7002 to the anode 7005 side asindicated by an arrow.

Next, a light-emitting element having a bottom emission structure willbe described with reference to FIG. 19B. FIG. 19B is a cross-sectionalview of a pixel in the case where the driving TFT 7011 is of an n-typeand light is emitted from a light-emitting element 7012 to a cathode7013 side. In FIG. 19B, the cathode 7013 of the light-emitting element7012 is formed over a light-transmitting conductive film 7017 that iselectrically connected to the driving TFT 7011, and a light-emittinglayer 7014 and an anode 7015 are stacked in this order over the cathode7013. A light-blocking film 7016 for reflecting or blocking light may beformed to cover the anode 7015 when the anode 7015 has alight-transmitting property. For the cathode 7013, a variety ofmaterials can be used as in the case of FIG. 19A as long as they areconductive materials having a low work function. The cathode 7013 isformed to have a thickness that can transmit light (preferably,approximately 5 nm to 30 nm). For example, an aluminum film with athickness of 20 nm can be used as the cathode 7013. Similar to the caseof FIG. 19A, the light-emitting layer 7014 may be formed using either asingle layer or a plurality of layers stacked. The anode 7015 does notneed to transmit light, but can be formed using a light-transmittingconductive material as in the case of FIG. 19A. As the light-blockingfilm 7016, a metal or the like that reflects light can be used forexample; however, it is not limited to a metal film. For example, aresin or the like to which black pigments are added can also be used.

The light-emitting element 7012 corresponds to a region where thelight-emitting layer 7014 is sandwiched between the cathode 7013 and theanode 7015. In the case of the pixel illustrated in FIG. 19B, light isemitted from the light-emitting element 7012 to the cathode 7013 side asindicated by an arrow.

Next, a light-emitting element having a dual emission structure will bedescribed with reference to FIG. 19C. In FIG. 19C, a cathode 7023 of alight-emitting element 7022 is formed over a light-transmittingconductive film 7027 which is electrically connected to the driving TFT7021, and a light-emitting layer 7024 and an anode 7025 are stacked inthis order over the cathode 7023. As in the case of FIG. 19A, thecathode 7023 can be formed using a variety of conductive materials aslong as they have a low work function. The cathode 7023 is formed tohave a thickness which allows light transmission. For example, a20-nm-thick aluminum film can be used as the cathode 7023. As in FIG.19A, the light-emitting layer 7024 may be formed using either a singlelayer or a plurality of layers stacked. The anode 7025 can be formedusing a light-transmitting conductive material as in the case of FIG.19A.

The light-emitting element 7022 corresponds to a region where thecathode 7023, the light-emitting layer 7024, and the anode 7025 overlapwith one another. In the case of the pixel illustrated in FIG. 19C,light is emitted from the light-emitting element 7022 to both the anode7025 side and the cathode 7023 side as indicated by arrows.

Note that, although the organic EL elements are described here as thelight-emitting elements, an inorganic EL element can also be provided asa light-emitting element.

Note that the example is described in which a thin film transistor (adriving TFT) which controls the driving of a light-emitting element iselectrically connected to the light-emitting element; however, astructure may be employed in which a TFT for current control isconnected between the driving TFT and the light-emitting element.

Note that the structure of the semiconductor device is not limited tothose illustrated in FIGS. 19A to 19C and can be modified in variousways based on techniques disclosed in this specification.

Next, the appearance and cross section of a light-emitting display panel(also referred to as a light-emitting panel) which corresponds to oneembodiment of the semiconductor device will be described with referenceto FIGS. 17A and 17B. FIG. 17A is a plan view of a panel in which a thinfilm transistor and a light-emitting element formed over a firstsubstrate are sealed between the first substrate and a second substratewith a sealant. FIG. 17B is a cross-sectional view along line H-I ofFIG. 17A.

A sealant 4505 is provided so as to surround a pixel portion 4502,signal line driver circuits 4503 a and 4503 b, and scan line drivercircuits 4504 a and 4504 b which are provided over a first substrate4501. In addition, a second substrate 4506 is provided over the pixelportion 4502, the signal line driver circuits 4503 a and 4503 b, and thescan line driver circuits 4504 a and 4504 b. Accordingly, the pixelportion 4502, the signal line driver circuits 4503 a and 4503 b, and thescan line driver circuits 4504 a and 4504 b are sealed together with afiller 4507, by the first substrate 4501, the sealant 4505, and thesecond substrate 4506. It is preferable that a panel be packaged(sealed) with a protective film (such as a laminate film or anultraviolet curable resin film) or a cover material with highair-tightness and little degasification so that the panel is not exposedto the outside air, in this manner.

The pixel portion 4502, the signal line driver circuits 4503 a and 4503b, and the scan line driver circuits 4504 a and 4504 b formed over thefirst substrate 4501 each include a plurality of thin film transistors,and a thin film transistor 4510 included in the pixel portion 4502 and athin film transistor 4509 included in the signal line driver circuit4503 a are illustrated as an example in FIG. 17B.

For the thin film transistors 4509 and 4510, the highly reliable thinfilm transistor including an oxide semiconductor layer described inEmbodiment 3 can be employed. Alternatively, the thin film transistordescribed in Embodiment 1 or 2 may be applied. The thin film transistors4509 and 4510 are n-channel thin film transistors.

Moreover, reference numeral 4511 denotes a light-emitting element. Afirst electrode layer 4517 which is a pixel electrode included in thelight-emitting element 4511 is electrically connected to a sourceelectrode layer or a drain electrode layer of the thin film transistor4510. Note that the structure of the light-emitting element 4511 is, butnot limited to, the stack structure which includes the first electrodelayer 4517, an electroluminescent layer 4512, and the second electrodelayer 4513. The structure of the light-emitting element 4511 can bechanged as appropriate depending on the direction in which light isextracted from the light-emitting element 4511, or the like.

A partition 4520 is formed using an organic resin film, an inorganicinsulating film, or organic polysiloxane. It is particularly preferablethat the partition 4520 be formed using a photosensitive material and anopening be formed over the first electrode layer 4517 so that a sidewallof the opening is formed as an inclined surface with continuouscurvature.

The electroluminescent layer 4512 may be formed with a single layer or aplurality of layers stacked.

A protective film may be formed over the second electrode layer 4513 andthe partition 4520 in order to prevent entry of oxygen, hydrogen,moisture, carbon dioxide, or the like into the light-emitting element4511. As the protective film, a silicon nitride film, a silicon nitrideoxide film, a DLC film, or the like can be formed.

In addition, a variety of signals and potentials are supplied to thesignal line driver circuits 4503 a and 4503 b, the scan line drivercircuits 4504 a and 4504 b, or the pixel portion 4502 from FPCs 4518 aand 4518 b.

A connection terminal electrode 4515 is formed from the same conductivefilm as the first electrode layer 4517 included in the light-emittingelement 4511, and a terminal electrode 4516 is formed from the sameconductive film as the source and drain electrode layers included in thethin film transistors 4509 and 4510.

The connection terminal electrode 4515 is electrically connected to aterminal included in the FPC 4518 a via an anisotropic conductive film4519.

As the second substrate 4506 located in the direction in which light isextracted from the light-emitting element 4511 needs to have alight-transmitting property. In that case, a light-transmitting materialsuch as a glass plate, a plastic plate, a polyester film, or an acrylicfilm is used for the second substrate 4506.

As the filler 4507, an ultraviolet curable resin or a thermosettingresin can be used, in addition to an inert gas such as nitrogen orargon. For example, PVC (polyvinyl chloride), acrylic, polyimide, anepoxy resin, a silicone resin, PVB (polyvinyl butyral), or EVA (ethylenevinyl acetate) can be used. For example, nitrogen is used for thefiller.

In addition, if needed, an optical film, such as a polarizing plate, acircularly polarizing plate (including an elliptically polarizingplate), a retardation plate (a quarter-wave plate or a half-wave plate),or a color filter, may be provided as appropriate on a light-emittingsurface of the light-emitting element. Further, the polarizing plate orthe circularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light can bediffused by projections and depressions on the surface so as to reducethe glare can be performed.

The signal line driver circuits 4503 a and 4503 b and the scan linedriver circuits 4504 a and 4504 b may be mounted with driver circuitsformed using a single crystal semiconductor film or a polycrystallinesemiconductor film over a substrate separately prepared. Alternatively,only the signal line driver circuits or part thereof, or only the scanline driver circuits or part thereof may be separately formed andmounted. This embodiment is not limited to the structure illustrated inFIGS. 17A and 17B.

Through the above process, a highly reliable light-emitting displaydevice (display panel) as a semiconductor device can be manufactured.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Embodiment 8

A semiconductor device disclosed in this specification can be applied toan electronic paper. An electronic paper can be used for electronicappliances of a variety of fields as long as they can display data. Forexample, an electronic paper can be applied to an e-book reader(electronic book), a poster, an advertisement in a vehicle such as atrain, or displays of various cards such as a credit card. Examples ofsuch electronic appliances are illustrated in FIG. 27.

FIG. 27 illustrates an example of an e-book reader 2700. For example,the e-book reader 2700 includes two housings, a housing 2701 and ahousing 2703. The housing 2701 and the housing 2703 are combined with ahinge 2711 so that the e-book reader 2700 can be opened and closed withthe hinge 2711 as an axis. With such a structure, the e-book reader 2700can operate like a paper book.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display one image or differentimages. In the case where the display portion 2705 and the displayportion 2707 display different images, for example, a display portion onthe right side (the display portion 2705 in FIG. 27) can display textand a display portion on the left side (the display portion 2707 in FIG.27) can display graphics.

FIG. 27 illustrates an example in which the housing 2701 is providedwith an operation portion and the like. For example, the housing 2701 isprovided with a power switch 2721, an operation key 2723, a speaker2725, and the like. With the operation key 2723, pages can be turned.Note that a keyboard, a pointing device, or the like may also beprovided on the surface of the housing, on which the display portion isprovided. Furthermore, an external connection terminal (an earphoneterminal, a USB terminal, a terminal that can be connected to variouscables such as an AC adapter and a USB cable, or the like), a recordingmedium insertion portion, and the like may be provided on the backsurface or the side surface of the housing. Moreover, the e-book reader2700 may have a function of an electronic dictionary.

The e-book reader 2700 may have a configuration capable of wirelesslytransmitting and receiving data. Through wireless communication, desiredbook data or the like can be purchased and downloaded from an electronicbook server.

Embodiment 9

A semiconductor device disclosed in this specification can be applied toa variety of electronic appliances (including game machines). Examplesof electronic appliances are a television set (also referred to as atelevision or a television receiver), a monitor of a computer or thelike, a camera such as a digital camera or a digital video camera, adigital photo frame, a mobile phone handset (also referred to as amobile phone or a mobile phone device), a portable game console, aportable information terminal, an audio reproducing device, alarge-sized game machine such as a pachinko machine, and the like.

FIG. 28A illustrates an example of a television set 9600. In thetelevision set 9600, a display portion 9603 is incorporated in a housing9601. The display portion 9603 can display images. Here, the housing9601 is supported by a stand 9605.

The television set 9600 can be operated with an operation switch of thehousing 9601 or a separate remote controller 9610. Channels and volumecan be controlled with an operation key 9609 of the remote controller9610 so that an image displayed on the display portion 9603 can becontrolled. Furthermore, the remote controller 9610 may be provided witha display portion 9607 for displaying data output from the remotecontroller 9610.

Note that the television set 9600 is provided with a receiver, a modem,and the like. With the use of the receiver, general televisionbroadcasting can be received. Moreover, when the display device isconnected to a communication network with or without wires via themodem, one-way (from a sender to a receiver) or two-way (between asender and a receiver or between receivers) information communicationcan be performed.

FIG. 28B illustrates an example of a digital photo frame 9700. Forexample, in the digital photo frame 9700, a display portion 9703 isincorporated in a housing 9701. The display portion 9703 can display avariety of images. For example, the display portion 9703 can displaydata of an image taken with a digital camera or the like and function asa normal photo frame.

Note that the digital photo frame 9700 is provided with an operationportion, an external connection terminal (a USB terminal, a terminalthat can be connected to various cables such as a USB cable, or thelike), a recording medium insertion portion, and the like. Althoughthese components may be provided on the surface on which the displayportion is provided, it is preferable to provide them on the sidesurface or the back surface for the design of the digital photo frame9700. For example, a memory storing data of an image taken with adigital camera is inserted in the recording medium insertion portion ofthe digital photo frame, whereby the image data can be transferred andthen displayed on the display portion 9703.

The digital photo frame 9700 may be configured to transmit and receivedata wirelessly. The structure may be employed in which desired imagedata is transferred wirelessly to be displayed.

FIG. 29A is a portable game machine and includes two housings, a housing9881 and a housing 9891, which are connected with a joint portion 9893so that the portable game machine can be opened or folded. A displayportion 9882 and a display portion 9883 are incorporated in the housing9881 and the housing 9891, respectively. In addition, the portable gamemachine illustrated in FIG. 29A includes a speaker portion 9884, arecording medium insertion portion 9886, an LED lamp 9890, an inputmeans (an operation key 9885, a connection terminal 9887, a sensor 9888(a sensor having a function of measuring force, displacement, position,speed, acceleration, angular velocity, rotational frequency, distance,light, liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radiation,flow rate, humidity, gradient, oscillation, odor, or infrared rays), ora microphone 9889), and the like. It is needless to say that thestructure of the portable game machine is not limited to the above andother structures provided with at least a semiconductor device disclosedin this specification can be employed. The portable game machine mayinclude other accessory equipment as appropriate. The portable gamemachine illustrated in FIG. 29A has a function of reading a program ordata stored in a recording medium to display it on the display portion,and a function of sharing information with another portable game machinevia wireless communication. Note that a function of the portable gamemachine illustrated in FIG. 29A is not limited to those described above,and the portable game machine can have a variety of functions.

FIG. 29B illustrates an example of a slot machine 9900 which is alarge-sized game machine. In the slot machine 9900, a display portion9903 is incorporated in a housing 9901. In addition, the slot machine9900 includes an operation means such as a start lever or a stop switch,a coin slot, a speaker, and the like. It is needless to say that thestructure of the slot machine 9900 is not limited to the above and otherstructures provided with at least a semiconductor device disclosed inthis specification may be employed. The slot machine 9900 may includeother accessory equipment as appropriate.

FIG. 30A is a perspective view illustrating an example of a portablecomputer.

In the portable computer of FIG. 30A, a top housing 9301 having adisplay portion 9303 and a bottom housing 9302 having a keyboard 9304can overlap with each other by closing a hinge unit which connects thetop housing 9301 and the bottom housing 9302. The portable computer ofFIG. 30A can be convenient for carrying, and in the case of using thekeyboard for input, the hinge unit is opened and the user can input datalooking at the display portion 9303.

The bottom housing 9302 includes a pointing device 9306 with which inputcan be performed, in addition to the keyboard 9304. Further, when thedisplay portion 9303 is a touch input panel, input can be performed bytouching part of the display portion. The bottom housing 9302 includesan arithmetic function portion such as a CPU or hard disk. In addition,the bottom housing 9302 includes another device, for example, anexternal connection port 9305 into which a communication cableconformable to communication standards of a USB is inserted.

The top housing 9301, which includes a display portion 9307 and can keepthe display portion 9307 therein by sliding it toward the inside of thetop housing 9301, can have a large display screen. In addition, the usercan adjust the orientation of a screen of the display portion 9307 whichcan be kept in the top housing 9301. When the display portion 9307 whichcan be kept in the top housing 9301 is a touch input panel, input can beperformed by touching part of the display portion 9307 which can be keptin the top housing 9301.

The display portion 9303 or the display portion 9307 which can be keptin the top housing 9301 are formed using an image display device of aliquid crystal display panel, a light-emitting display panel such as anorganic light-emitting element or an inorganic light-emitting element,or the like.

In addition, the portable computer in FIG. 30A can be provided with areceiver and the like and can receive a television broadcast to displayan image on the display portion. The user can watch a televisionbroadcast when the whole screen of the display portion 9307 is exposedby sliding the display portion 9307 while the hinge unit which connectsthe top housing 9301 and the bottom housing 9302 is kept closed. In thiscase, the hinge unit is not opened and display is not performed on thedisplay portion 9303. In addition, start up of only a circuit fordisplaying a television broadcast is performed. Therefore, power can beconsumed to the minimum, which is useful for the portable computer whosebattery capacity is limited.

FIG. 30B is a perspective view illustrating an example of a mobile phonethat the user can wear on the wrist like a wristwatch.

This mobile phone is formed with a main body which includes acommunication device including at least a telephone function, andbattery; a band portion which enables the main body to be wore on thewrist; an adjusting portion 9205 for adjusting the fixation of the bandportion fixed for the wrist; a display portion 9201; a speaker 9207; anda microphone 9208.

In addition, the main body includes operation switches 9203. Theoperation switches 9203 can serve, for example, as a switch for startinga program for the Internet when the switch is pushed, in addition toserving as a switch for turning on a power source, a switch for shiftingthe display, a switch for instruction to start taking images, or thelike, and can be configured to have respective functions.

Input to this mobile phone is operated by touching the display portion9201 with a finger or an input pen, operating the operation switches9203, or inputting voice into the microphone 9208. Note that displayedbuttons 9202 which are displayed on the display portion 9201 areillustrated in FIG. 30B. Input can be performed by touching thedisplayed buttons 9202 with a finger or the like.

Further, the main body includes a camera portion 9206 including an imagepick-up means having a function of converting an image of an object,which is formed through a camera lens, to an electronic image signal.Note that the camera portion is not necessarily provided.

The mobile phone illustrated in FIG. 30B is provided with a receiver ofa television broadcast and the like, and can display an image on thedisplay portion 9201 by receiving a television broadcast. In addition,the mobile phone illustrated in FIG. 30B is provided with a memorydevice and the like such as a memory, and can record a televisionbroadcast in the memory. The mobile phone illustrated in FIG. 30B mayhave a function of collecting location information, such as the GPS.

An image display device of a liquid crystal display panel, alight-emitting display panel such as an organic light-emitting elementor an inorganic light-emitting element, or the like is used as thedisplay portion 9201. The cellular phone illustrated in FIG. 30B iscompact and lightweight and the battery capacity of the cellular phoneillustrated in FIG. 30B is limited. Therefore, a panel which can bedriven with low power consumption is preferably used as a display devicefor the display portion 9201.

Note that FIG. 30B illustrates the electronic appliances which are wornon the wrist; however, this embodiment is not limited thereto as long asa portable shape is employed.

Embodiment 10

In this embodiment, an example of a manufacturing process which ispartly different from that of Embodiment 1 will be described. An examplein which heat treatment for dehydration or dehydrogenation is performedafter formation of source and drain electrode layers 405 a and 405 b isillustrated in FIGS. 31A to 31D. Note that portions the same as those inFIGS. 6A to 6D are denoted by the same reference numerals.

In a manner similar to Embodiment 1, over the substrate 400 having aninsulating surface, the gate electrode layer 401, the gate insulatinglayer 402, and the oxide semiconductor layer 430 are formed (see FIG.31A).

The source and drain electrode layers 405 a and 405 b are formed overthe oxide semiconductor layer 430, and the oxide semiconductor layer 430is partly etched, so that an oxide semiconductor layer 441 is formed(see FIG. 31B).

Next, the oxide semiconductor layer 441 and the source and drainelectrode layers 405 a and 405 b are subjected to heat treatment andslow cooling under an atmosphere of an inert gas (such as nitrogen,helium, neon, or argon) or under reduced pressure. This heat treatmentcauses dehydration or dehydrogenation in the oxide semiconductor layer441, so that resistance of the oxide semiconductor layer 441 is reduced.Thus, the low-resistance oxide semiconductor layer 432 can be obtained(see FIG. 31C). Note that as the source and drain electrode layers 405 aand 405 b, a material which has heat resistance enough to withstand heattreatment, such as tungsten or molybdenum, is preferably used.

After the heat treatment and slow cooling, the oxide insulating film 407is formed to be in contact with the oxide semiconductor layer 432 by asputtering method or a PCVD method without exposure to air. When theoxide insulating film 407 is formed to be in contact with thelow-resistance oxide semiconductor layer 432 by a sputtering method or aPCVD method, in the low-resistance oxide semiconductor layer 432, atleast a region in contact with the oxide insulating film 407 hasincreased resistance (i.e., the carrier concentration is reduced,preferably to lower than 1×10¹⁸/cm³, more preferably 1×10¹⁴/cm³ orlower), so that a high-resistance oxide semiconductor region can beobtained. Thus, the oxide semiconductor layer 432 becomes thesemiconductor layer 403 having a high-resistance oxide semiconductorregion (a third oxide semiconductor layer), and then the thin filmtransistor 470 can be completed (see FIG. 31D).

Impurities (such as H₂O, H, and OH) contained in the oxide semiconductorlayer are reduced by performance of the heat treatment for dehydrationor dehydrogenation, and the carrier concentration is increased. Afterthat, slow cooling is performed. Then, formation of an oxide insulatingfilm in contact with the oxide semiconductor layer, or the like, isperformed, so that the carrier concentration is reduced. Thus,reliability of the thin film transistor 470 can be improved.

Further, this embodiment can be freely combined with Embodiment 1.

Embodiment 11

A semiconductor device and a method of manufacturing the semiconductordevice will be described with reference to FIG. 32. The same portion asor a portion having similar function to those described in Embodiment 1can be formed in a manner similar to that described in Embodiment 1;therefore, repetitive description is omitted.

The thin film transistor 471 illustrated in FIG. 32 is an example, inwhich a conductive layer 409 is provided to overlap with the gateelectrode layer 401 and a channel region of the semiconductor layer 403with an insulating film interposed therebetween.

FIG. 32 is a cross-sectional view of the thin film transistor 471included in a semiconductor device. The thin film transistor 471 is abottom-gate thin film transistor and includes, over the substrate 400which is a substrate having an insulating surface, the gate electrodelayer 401, the gate insulating layer 402, the semiconductor layer 403,the source and drain electrode layers 405 a and 405 b, and theconductive layer 409. The conductive layer 409 is provided over theoxide insulating film 407 so as to overlap with the gate electrode layer401.

The conductive layer 409 can be formed using a material similar to thatof the gate electrode layer 401 or the source and drain electrode layers405 a and 405 b by a method similar thereto. In the case of providing apixel electrode layer, the conductive layer 409 may be formed using amaterial similar to that of the pixel electrode by a method similarthereto. In this embodiment, the conductive layer 409 is formed using astacked layer of a titanium film, an aluminum film, and a titanium film.

The conductive layer 409 may have the same potential as the gateelectrode layer 401 or have potential different from that of the gateelectrode layer 401 and can function as a second gate electrode layer.Further, the conductive layer 409 may be in a floating state.

In addition, by providing the conductive layer 409 in a positionoverlapping with the semiconductor layer 403, in a bias-temperaturestress test (BT test) for examining reliability of a thin filmtransistor, the amount of shift in threshold voltage of the thin filmtransistor 471 between before and after the BT test can be reduced. Inparticular, in a −BT test where −20 V of voltage is applied to a gateafter the substrate temperature is increased to 150° C., shift inthreshold voltage can be suppressed.

This embodiment can be freely combined with Embodiment 1.

Embodiment 12

A semiconductor device and a method for manufacturing a semiconductordevice will be described with reference to FIG. 33. The same portion asor a portion having similar function to those described in Embodiment 1can be formed in a manner similar to that described in Embodiment 1;therefore, repetitive description is omitted.

A thin film transistor 472 illustrated in FIG. 33 is an example, inwhich a conductive layer 419 is provided to overlap with the gateelectrode layer 401 and a channel region of the semiconductor layer 403with the oxide insulating film 407 and an insulating layer 410interposed therebetween.

FIG. 33 is a cross-sectional view of the thin film transistor 472included in a semiconductor device. The thin film transistor 472 is abottom-gate thin film transistor and includes, over the substrate 400which is a substrate having an insulating surface, the gate electrodelayer 401, the gate insulating layer 402, the semiconductor layer 403,source and drain regions 404 a and 404 b, the source and drain electrodelayers 405 a and 405 b, and the conductive layer 419. The conductivelayer 419 is provided over the oxide insulating film 407 and theinsulating layer 410 to overlap with the gate electrode layer 401.

In this embodiment, the insulating layer 410 serving as a planarizationfilm is stacked over the oxide insulating film 407, and an opening whichreaches the source or drain electrode layer 405 b is formed in the oxideinsulating film 407 and the insulating layer 410. A conductive film isformed over the insulating layer 410 and in the opening formed in theoxide insulating film 407 and the insulating layer 410, and etched intoa desired shape, so that the conductive layer 419 and a pixel electrodelayer 411 are formed. In such a manner, the conductive layer 419 can beformed together with the pixel electrode layer 411, using the samematerial by the same method. In this embodiment, the pixel electrodelayer 411 and the conductive layer 419 are formed using indium oxide-tinoxide alloy containing silicon oxide (an In—Sn—O based oxide containingsilicon oxide).

The conductive layer 419 may be formed using a material similar to thatof the gate electrode layer 401 or the source and drain electrode layers405 a and 405 b by a method similar thereto.

The conductive layer 419 may have the same potential as the gateelectrode layer 401 or have potential different from that of the gateelectrode layer 401 and can function as a second gate electrode layer.Further, the conductive layer 419 may be in a floating state.

In addition, in the case of providing the conductive layer 419 in aportion overlapping with the semiconductor layer 403, in abias-temperature stress test (BT test) for examining reliability of athin film transistor, the amount of shift in threshold voltage of thethin film transistor 472 between before and after the BT test can bereduced.

This embodiment can be freely combined with Embodiment 1.

Embodiment 13

In this embodiment, an example of a channel-stop thin film transistor1430 will be described with reference to FIGS. 34A to 34C. FIG. 34Cillustrates an example of a top view of the thin film transistor,cross-sectional view along dotted line Z1-Z2 of which corresponds toFIG. 34B. Described in this embodiment is an example in which gallium isnot contained in an oxide semiconductor layer of the thin filmtransistor 1430.

As in FIG. 34A, a gate electrode layer 1401 is formed over a substrate1400. Next, an oxide semiconductor layer is formed over a gateinsulating layer 1402 covering the gate electrode layer 1401.

In this embodiment, the oxide semiconductor layer is formed using aSn—Zn—O-based oxide semiconductor by a sputtering method. When galliumis not used for the oxide semiconductor layer, cost can be reducedbecause an expensive target is not used in formation of the oxidesemiconductor layer.

Just after deposition of an oxide semiconductor film or after patterningof the oxide semiconductor film, dehydration or dehydrogenation isperformed.

In order to perform dehydration or dehydrogenation, heat treatment isperformed under an atmosphere of an inert gas (such as nitrogen, helium,neon, or argon) or under reduced pressure, and then, slow cooling isperformed under an inert atmosphere. The heat treatment is performed at200° C. to 600° C. inclusive, preferably 400° C. to 450° C. inclusive.By heat treatment and slow cooling performed under an inert-gasatmosphere or under reduced pressure, the oxide semiconductor layer canhave reduced resistance (i.e., the carrier concentration is increased,preferably to 1×10¹⁸/cm³ or higher), so that a low-resistance oxidesemiconductor layer 1403 can be provided (see FIG. 34A).

Next, a channel protective layer 1418 is provided to be in contact withthe oxide semiconductor layer 1403. The channel protective layer 1418can prevent the channel formation region of the oxide semiconductorlayer 1403 to be damaged in the manufacturing process (e.g., reductionin thickness due to plasma or an etchant in etching). Accordingly,reliability of the thin film transistor 1430 can be improved.

Further, after dehydration or dehydrogenation, the channel protectivelayer 1418 can be formed successively without exposure to air.Successive film formation without being exposed to air makes it possibleto obtain each interface of stacked layers, which are not contaminatedby atmospheric components or impurity elements floating in air.Therefore, variation in characteristics of the thin film transistor canbe reduced.

When the channel protective layer 1418 that is an oxide insulating filmis formed to be in contact with the low-resistance oxide semiconductorlayer 1403, by a sputtering method, a PCVD method, or the like, in thelow-resistance oxide semiconductor layer 1403, at least a region whichis in contact with the channel protective layer 1418 can have increasedresistance (i.e., the carrier concentration is reduced, preferably tolower than 1×10¹⁸/cm³, more preferably 1×10¹⁴/cm³ or lower). Thus, ahigh-resistance oxide semiconductor region can be obtained. During amanufacture process of a semiconductor device, it is important toincrease and decrease the carrier concentration in the oxidesemiconductor layer through performance of heat treatment and slowcooling under an inert-gas atmosphere (or reduced pressure), formationof an oxide insulating film, and the like.

The channel protective layer 1418 can be formed using an inorganicmaterial including oxygen (such as silicon oxide, silicon oxynitride, orsilicon nitride oxide). As a formation method, a vapor deposition methodsuch as a plasma CVD method or a thermal CVD method or a sputteringmethod can be used. The channel protective layer 1418 is processed byetching a shape of a deposited film. Here, the channel protective layer1418 is formed in such a manner that a silicon oxide film is formed by asputtering method and processed by etching using a mask formed byphotolithography.

Next, n⁺ layers 1406 a and 1406 b are formed over the channel protectivelayer 1418 and the oxide semiconductor layer 1403. In this embodiment,the n⁺ layers 1406 a and 1406 b serving as source and drain regions,which are oxide semiconductor layers having lower resistance, are formedof an Al—Zn—O-based non-single-crystal film under deposition conditionsdifferent from the deposition conditions of the oxide semiconductorlayer 1403. The n⁺ layers 1406 a and 1406 b may be formed using anAl—Zn—O-based non-single-crystal film containing nitrogen, that is, anAl—Zn—O—N-based non-single-crystal film (also called an AZON film).

Next, a source electrode layer 1405 a and a drain electrode layer 1405 bare formed over the n⁺ layer 1406 a and the n⁺ layer 1406 b,respectively; thus, the thin film transistor 1430 is completed (see FIG.34B). The source and drain electrode layers 1405 a and 1405 b are formedusing any of an element selected from Al, Cr, Ta, Ti, Mo, and W, analloy including any of the elements as a component, an alloy filmincluding a combination of any of the elements, and the like.Alternatively, the source and drain electrode layers 1405 a and 1405 bmay have a stacked layer including any of the above.

Provision of the n⁺ layers 1406 a and 1406 b can make a good junctionbetween the oxide semiconductor layer 1403 and the source and drainelectrode layers 1405 a and 1405 which are metal layers, which allowshigher thermal stability than in the case of providing Schottkyjunction. In addition, willing provision of the n⁺ layer is effective insupplying carriers to the channel (on the source side), stably absorbingcarriers from the channel (on the drain side), or preventing aresistance component from being formed at an interface between thewiring and the oxide semiconductor layer. Moreover, since resistance isreduced, good mobility can be ensured even with a high drain voltage.

Further, this embodiment is not limited to the above-described structureincluding the n⁺ layers 1406 a and 1406 b; a structure in which an n⁺layer is not provided may be employed.

After the channel protective layer 1418 is formed, the thin filmtransistor 1430 is subjected to heat treatment under a nitrogenatmosphere or an air atmosphere (in air) (at a temperature equal to orhigher than 150° C. and lower than 350° C.). For example, heat treatmentis performed under a nitrogen atmosphere at 250° C. for one hour. Insuch heat treatment, the oxide semiconductor layer 1403 in a conditionof being in contact with the channel protective layer 1418 is heated;thus, variation in electric characteristics of the thin film transistor1470 can be reduced. There is no particular limitation on when toperform this heat treatment (at temperature equal to or higher than 150°C. and lower than 350° C., preferably) as long as it is performed afterthe channel protective layer 1418 is formed. When this heat treatmentalso serves as heat treatment in another step, e.g., heat treatment information of a resin film or heat treatment for reducing resistance of atransparent conductive film, the number of steps can be prevented fromincreasing.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Embodiment 14

A semiconductor device and a method for manufacturing a semiconductordevice will be described with reference to FIGS. 35A and 35B. The sameportion or a portion having a function similar to that of Embodiment 13and the same steps as those of Embodiment 13 can be made as described inEmbodiment 13; thus the repetitive description thereof is omitted.

A thin film transistor 1431 illustrated in FIG. 35A is an example havinga structure in which a conductive layer 1409 is provided to overlap withthe gate electrode layer 1401 and a channel region of the oxidesemiconductor layer 1403 with the channel protective layer 1418 and aninsulating layer 1407 interposed therebetween.

FIG. 35A is a cross-sectional view of the thin film transistor 1431included in a semiconductor device. The thin film transistor 1431 is abottom-gate thin film transistor, which includes, over the substrate1400 having an insulating surface, the gate electrode layer 1401, thegate insulating layer 1402, the oxide semiconductor layer 1403, thesource and drain regions 1404 a and 1404 b, the source and drainelectrode layers 1405 a and 1405 b, and the conductive layer 1409. Theconductive layer 1409 is provided to overlap with the gate electrodelayer 1401 with the insulating layer 1407 interposed therebetween.

The conductive layer 1409 can be formed using a material similar to thatof the gate electrode layer 1401 or the source and drain electrodelayers 1405 a and 1405 b by a method similar thereto. In the case wherea pixel electrode layer is provided, the conductive layer 1409 may beformed using a material similar to that of the pixel electrode layer bya method similar thereto. In this embodiment, a stack of a titaniumfilm, an aluminum film, and a titanium film is used as the conductivelayer 1409.

The conductive layer 1409 may have the same potential as the gateelectrode layer 1401 or have potential different from that of the gateelectrode layer 1401 and can function as a second gate electrode layer.Further, the conductive layer 1409 may be in a floating state.

In addition, by providing the conductive layer 1409 in a portionoverlapping with the oxide semiconductor layer 1403, in abias-temperature stress test (hereinafter, referred to as a BT test) forexamining reliability of a thin film transistor, the amount of shift inthreshold voltage of the thin film transistor 1431 between before andafter the BT test can be reduced.

FIG. 35B illustrates an example partly different from FIG. 35A. The sameportion and a step as, or a portion having function similar to thoseillustrated in FIG. 35A can be made in a manner similar to thatillustrated in FIG. 35A; therefore, repetitive description is omitted.

A thin film transistor 1432 illustrated in FIG. 35B is an example havinga structure in which the conductive layer 1409 is provided to overlapwith the gate electrode layer 1401 and a channel region of the oxidesemiconductor layer 1403 with the channel protective layer 1418, theinsulating layer 1407, and an insulating layer 1408 interposed betweenthe conductive layer 1409 and the gate electrode layer 1401.

In FIG. 35B, the insulating layer 1408 functioning as a planarizationfilm is stacked over the insulating layer 1407.

In addition, FIG. 35B shows a structure in which source and drainregions are not provided, and the oxide semiconductor layer 1403 isdirectly in contact with the source electrode layer 1405 a and the drainelectrode layer 1405 b.

The conductive layer 1409 is provided in a portion overlapping with theoxide semiconductor layer 1403 in the structure of FIG. 35B similar toFIG. 35A, whereby in a bias-temperature stress test for examiningreliability of a thin film transistor, the amount of shift in thresholdvoltage of the thin film transistor 1432 between before and after the BTtest can be reduced.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

Embodiment 15

In this embodiment, an example of a structure which is partly differentfrom that of Embodiment 1 will be described with reference to FIG. 36.The same portion as or a portion having a function similar to thosedescribed in Embodiment 1 can be formed in a manner similar to thatdescribed in Embodiment 1, and also the steps similar to those ofEmbodiment 1 can be performed in a manner similar to those described inEmbodiment 1; therefore, repetitive description is omitted.

In this embodiment, after patterning of the first oxide semiconductorlayer, heat treatment is performed under an atmosphere of an inert gas(such as nitrogen, helium, neon, or argon) or under reduced pressure,and then slow cooling is performed. Heat treatment performed on thefirst oxide semiconductor layer under the above atmosphere makes itpossible to eliminate impurities such as hydrogen and moisture in anoxide semiconductor layer 403.

Next, a second oxide semiconductor film used for forming source anddrain regions (also referred to as an n⁺ layer or a buffer layer) of athin film transistor is formed over the first oxide semiconductor layerand then a conductive film is formed.

Then, the first oxide semiconductor layer, the second oxidesemiconductor film, and the conductive film are selectively etchedthrough an etching step to form the oxide semiconductor layer 403,source and drain regions 404 a and 404 b (also referred to as n⁺ layersor buffer layers), and the source and drain electrode layers 405 a and405 b. Note that the oxide semiconductor layer 403 is partly etched tohave a groove portion (a recessed portion).

Next, a silicon oxide film as the oxide insulating film 407 is formed incontact with the oxide semiconductor layer 403 by a sputtering method ora PCVD method. The oxide insulating film 407 formed in contact with thelow-resistance oxide semiconductor layer does not include impuritiessuch as moisture, a hydrogen ion, and OH⁻ and is formed using aninorganic insulating film which blocks entry of these impurities fromthe outside, specifically, a silicon oxide film or a silicon nitrideoxide film.

When the oxide insulating film 407 is formed in contact with thelow-resistance oxide semiconductor layer 403 by a sputtering method or aPCVD method, or the like, in the low-resistance oxide semiconductorlayer 403, at least a region in contact with the oxide insulating film407 has increased resistance (i.e., the carrier concentration isreduced, preferably to lower than 1×10¹⁸/cm³, more preferably 1×10¹⁴/cm³or lower). Thus, a high-resistance oxide semiconductor region can beprovided. By formation of the oxide insulating film 407 in contact withthe oxide semiconductor layer 403, the oxide semiconductor layer has ahigh-resistance oxide semiconductor region. Thus, a thin film transistor473 can be completed (see FIG. 36).

In the structure illustrated in FIG. 36, an In—Ga—Zn—O-basednon-single-crystal film is used for the source and drain regions (alsoreferred to as n⁺ layers or buffer layers) 404 a and 404 b.

In addition, the source region is provided between the oxidesemiconductor layer 403 and the source electrode layer, and the drainregion is provided between the oxide semiconductor layer 403 and thedrain electrode layer. As the source and drain regions, an oxidesemiconductor layer having an n-type conductivity is used.

Further, the second oxide semiconductor film used for the source anddrain regions 404 a and 404 b of the thin film transistor 473 ispreferably thinner than the first oxide semiconductor layer used for achannel formation region and preferably has conductivity (electricalconductivity) higher than the first oxide semiconductor layer.

Further, the first oxide semiconductor layer used for the channelformation region has an amorphous structure and the second oxidesemiconductor film used for the source region and the drain regionincludes a crystal grain (nanocrystal) in an amorphous structure in somecases. The crystal grain (nanocrystal) in the second oxide semiconductorfilm used for the source region and the drain region has a diameter of 1nm to 10 nm, typically about 2 nm to 4 nm.

After formation of the oxide insulating film 407, the thin filmtransistor 473 may be subjected to heat treatment (preferably at atemperature higher than or equal to 150° C. and lower than 350° C.)under a nitrogen atmosphere or an air atmosphere (in air). For example,heat treatment is performed under a nitrogen atmosphere at 250° C. forone hour. In such heat treatment, the oxide semiconductor layer 403 in acondition of being in contact with the oxide insulating film 407 isheated; thus, variation in electric characteristics of the thin filmtransistor 473 can be reduced.

This embodiment can be implemented in appropriate combination with thestructures described in the other embodiments.

On the present invention having the above-described structures, furtherspecific description will be made with an embodiments below.

Example 1

With respect to an oxide semiconductor layer including a region havinghigh oxygen density and a region having low oxygen density, a change inthe oxygen density between before and after heat treatment wassimulated. The result thereof will be described with reference to FIG.42 and FIG. 43 in this example. As software for the simulation,Materials Explorer 5.0 manufactured by Fujitsu Limited was used.

FIG. 42 illustrates a model of an oxide semiconductor layer which wasused for the simulation. Here, a structure in which a layer 1203 havinglow oxygen density and a layer 1205 having high oxygen density werestacked was employed for an oxide semiconductor layer 1201.

The layer 1203 having low oxygen density was formed to have an amorphousstructure including In atoms, Ga atoms, Zn atoms, and O atoms, where thenumbers of In atoms, Ga atoms, and Zn atoms were each 15 and the numberof O atoms was 54.

In addition, the layer 1205 having high oxygen density was formed tohave an amorphous structure including In atoms, Ga atoms, Zn atoms, andO atoms, where the numbers of In atoms, Ga atoms, and Zn atoms were each15 and the number of O atoms was 66.

The density of the oxide semiconductor layer 1201 was set to 5.9 g/cm³.

Next, the classical molecular dynamics (MD) simulation was performed onthe oxide semiconductor layer 1201 under conditions of NVT ensemble anda temperature of 250° C. The time step was set to 0.2 fs, and the totalsimulation time was set to 200 ps. In addition, Born-Mayer-Hugginspotential was used for the potentials of metal-oxygen bonding andoxygen-oxygen bonding. Moreover, movement of atoms at an upper endportion and a lower end portion of the oxide semiconductor layer 1201was fixed.

The simulation results are shown in FIG. 43. In z-axis coordinates, therange of 0 nm to 1.15 nm indicates the layer 1203 having low oxygendensity, and the range of 1.15 nm to 2.3 nm indicates the layer 1205having high oxygen density. The distribution of oxygen densities beforethe MD simulation is indicated by a solid line 1207, and thedistribution of oxygen densities after the MD simulation is indicated bya dashed line 1209.

The solid line 1207 shows that the oxide semiconductor layer 1201 hashigh oxygen densities in a region ranging from an interface between thelayer 1203 having low oxygen density and the layer 1205 having highoxygen density to the layer 1205 having high oxygen concentration. Onthe other hand, the dashed line 1209 shows that the oxygen density isuniform in the layer 1203 having low oxygen density and the layer 1205having high oxygen density.

From the above, when there is non-uniformity in the distribution ofoxygen density as in the stack of the layer 1203 having low oxygendensity and the layer 1205 having high oxygen density, it is found thatthe oxygen density from where the oxygen density is higher to where theoxygen density is lower by heat treatment and thus the oxygen densitybecomes uniform.

That is, as described in Embodiment 1, since the oxygen density at theinterface between the oxide semiconductor layer 403 and the oxideinsulating film 407 is increased by formation of the oxide insulatingfilm 407 over the first oxide semiconductor layer 403, the oxygendiffuses to the oxide semiconductor layer 403 where the oxygen densityis low and thus the semiconductor layer 403 has higher resistance. Asdescribed above, reliability of a thin film transistor can be improved.

This application is based on Japanese Patent Application serial no.2009-156410 filed with Japan Patent Office on Jun. 30, 2009, the entirecontents of which are hereby incorporated by reference.

The invention claimed is:
 1. A method for manufacturing a semiconductordevice comprising the steps of: forming an oxide semiconductor layerover an insulating layer; heating the oxide semiconductor layer under anatmosphere comprising nitrogen at a temperature equal to or higher than400° C. to increase a carrier concentration in the oxide semiconductorlayer; after heating the oxide semiconductor layer, forming an oxideinsulating layer over and in contact with a part of the oxidesemiconductor layer; and after forming the oxide insulating layer,heating the oxide insulating layer to reduce the carrier concentrationin the oxide semiconductor layer.
 2. The method for manufacturing asemiconductor device according to claim 1, further comprising the stepof forming a source electrode layer and a drain electrode layer over theoxide semiconductor layer before forming the oxide insulating layer. 3.The method for manufacturing a semiconductor device according to claim2, wherein the source electrode layer and the drain electrode layercomprise a material selected from titanium and molybdenum.
 4. The methodfor manufacturing a semiconductor device according to claim 1, whereinheating the oxide insulating layer is performed under an atmospherecomprising nitrogen.
 5. The method for manufacturing a semiconductordevice according to claim 1, wherein the oxide semiconductor layercomprises a crystal.
 6. The method for manufacturing a semiconductordevice according to claim 1, wherein the oxide semiconductor layercomprises indium and zinc.
 7. The method for manufacturing asemiconductor device according to claim 1, wherein the oxidesemiconductor layer comprises a material selected from the groupconsisting of In—Sn—Zn—O-based oxide semiconductor; an In—Al—Zn—O-basedoxide semiconductor; a Sn—Ga—Zn—O-based oxide semiconductor; anAl—Ga—Zn—O-based oxide semiconductor; a Sn—Al—Zn—O-based oxidesemiconductor; an In—Zn—O-based oxide semiconductor; an In—Ga—O-basedoxide semiconductor; a Sn—Zn—O-based oxide semiconductor; anAl—Zn—O-based oxide semiconductor; an In—O-based oxide semiconductor; aSn—O-based oxide semiconductor; and a Zn—O-based oxide semiconductor. 8.The method for manufacturing a semiconductor device according to claim1, wherein the oxide semiconductor layer comprises an intrinsic oxidesemiconductor after heating the oxide insulating layer.
 9. The methodfor manufacturing a semiconductor device according to claim 1, whereinthe oxide semiconductor layer comprises an oxide semiconductor in anoxygen-excess state after heating the oxide insulating layer.
 10. Amethod for manufacturing a semiconductor device comprising the steps of:forming a first conductive layer; forming an oxide semiconductor layerover the conductive layer; heating the oxide semiconductor layer underan atmosphere comprising nitrogen at a temperature equal to or higherthan 400° C. to increase a carrier concentration in the oxidesemiconductor layer; after heating the oxide semiconductor layer,forming an oxide insulating layer over and in contact with a part of theoxide semiconductor layer; after forming the oxide insulating layer,heating the oxide insulating layer to reduce the carrier concentrationin the oxide semiconductor layer; and forming a second conductive layerover the oxide insulating layer, wherein the second conductive layeroverlaps the first conductive layer and the oxide semiconductor layer.11. The method for manufacturing a semiconductor device according toclaim 10, further comprising the step of forming a source electrodelayer and a drain electrode layer over the oxide semiconductor layerbefore forming the oxide insulating layer.
 12. The method formanufacturing a semiconductor device according to claim 11, wherein thesource electrode layer and the drain electrode layer comprise a materialselected from titanium and molybdenum.
 13. The method for manufacturinga semiconductor device according to claim 10, wherein heating the oxideinsulating layer is performed under an atmosphere comprising nitrogen.14. The method for manufacturing a semiconductor device according toclaim 10, wherein the oxide semiconductor layer comprises a crystal. 15.The method for manufacturing a semiconductor device according to claim10, wherein the oxide semiconductor layer comprises indium and zinc. 16.The method for manufacturing a semiconductor device according to claim10, wherein the oxide semiconductor layer comprises a material selectedfrom the group consisting of In—Sn—Zn—O-based oxide semiconductor; anIn—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxidesemiconductor; an Al—Ga—Zn—O-based oxide semiconductor; aSn—Al—Zn—O-based oxide semiconductor; an In—Zn—O-based oxidesemiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-basedoxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-basedoxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-basedoxide semiconductor.
 17. The method for manufacturing a semiconductordevice according to claim 10, wherein the oxide semiconductor layercomprises an intrinsic oxide semiconductor after heating the oxideinsulating layer.
 18. The method for manufacturing a semiconductordevice according to claim 10, wherein the oxide semiconductor layercomprises an oxide semiconductor in an oxygen-excess state after heatingthe oxide insulating layer.
 19. The method for manufacturing asemiconductor device according to claim 10, wherein the first conductivelayer and the second conductive layer are electrically connected to eachother.
 20. A method for manufacturing a semiconductor device comprisingthe steps of: forming an oxide semiconductor layer; performing a firstheat treatment on the oxide semiconductor layer under an atmospherecomprising nitrogen at a temperature not lower than 300° C. to reduceoxygen in the oxide semiconductor layer; forming an oxide insulatinglayer over and in contact with a region in the oxide semiconductorlayer; and performing a second heat treatment on the oxide insulatinglayer under an atmosphere comprising nitrogen to increase oxygen in theoxide semiconductor layer.
 21. The method for manufacturing asemiconductor device according to claim 20, further comprising the stepof forming a source electrode layer and a drain electrode layer over theoxide semiconductor layer before forming the oxide insulating layer. 22.The method for manufacturing a semiconductor device according to claim21, wherein the source electrode layer and the drain electrode layercomprise a material selected from titanium and molybdenum.
 23. Themethod for manufacturing a semiconductor device according to claim 20,wherein the oxide semiconductor layer comprises a crystal.
 24. Themethod for manufacturing a semiconductor device according to claim 20,wherein the oxide semiconductor layer comprises indium and zinc.
 25. Themethod for manufacturing a semiconductor device according to claim 20,wherein the oxide semiconductor layer comprises a material selected fromthe group consisting of In—Sn—Zn—O-based oxide semiconductor; anIn—Al—Zn—O-based oxide semiconductor; a Sn—Ga—Zn—O-based oxidesemiconductor; an Al—Ga—Zn—O-based oxide semiconductor; aSn—AI—Zn—O-based oxide semiconductor; an In—Zn—O-based oxidesemiconductor; an In—Ga—O-based oxide semiconductor; a Sn—Zn—O-basedoxide semiconductor; an Al—Zn—O-based oxide semiconductor; an In—O-basedoxide semiconductor; a Sn—O-based oxide semiconductor; and a Zn—O-basedoxide semiconductor.
 26. The method for manufacturing a semiconductordevice according to claim 20, wherein the oxide semiconductor layercomprises an intrinsic oxide semiconductor after heating the oxideinsulating layer.
 27. The method for manufacturing a semiconductordevice according to claim 20, wherein the oxide semiconductor layercomprises an oxide semiconductor in an oxygen-excess state after heatingthe oxide insulating layer.